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Vanadium dioxide (VO2) thin films exhibit a metalâ€"insulator transition (MIT) with sensitivity to the lattice strain. Substrates with step and terrace structures are an attractive platform for growing high-quality thin films. Thus, a prominent lattice strain effect could be derived using VO2 thin films on these substrates. In this study, VO2/TiO2 microwires were fabricated following the thin film growth to investigate the microwire-direction dependence of the MIT property. The in-plane crystal orientation dependence of the MIT property was enhanced for VO2/TiO2 microwires with step and terrace structures, which is promising for strain engineering in device applications. [ABSTRACT FROM AUTHOR]