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The growth mechanism of ZnO films fabricated via mist CVD was proposed by analyzing the growth rates, crystallinities, surface morphologies, and chemical states of the films that were grown when the precursor material supply amounts were fixed and the H2O concentrations were changed. At appropriate conditions, e.g. [H2O]/[Zn] ≈ 60–70 and [Zn] = 20 mM, high-quality ZnO thin films with a high growth rate, (001) dominant orientation, smooth surface, and low oxygen-related defects were obtained. These conditions provided a sufficient diffusion length for the precursor materials on the surface and an appropriate collision probability for the precursor and oxygen sources. [ABSTRACT FROM AUTHOR]

Ammonium dichromate and chromium chloride were examined via thermogravimetric and differential thermal analyses and used to grow α-Cr2O3 via mist chemical vapor deposition. Only the former resulted in noticeable film formation. Using ammonium dichromate, α-Cr2O3 single crystals were grown in a wide growth-temperature range of 300–440 °C. The dependences of the lattice constants a and c on the growth temperature and precursor concentration were explained by combination of (i) lattice reconstruction and (ii) unit-cell volume variation. A maximum growth rate of 10 nm/min; a low (0006) rocking-curve full width at half maximum of 150 arcsec; and low a and c lattice mismatches (with α-Ga2O3) of 0.7 and 1.4%, respectively, were achieved. [ABSTRACT FROM AUTHOR]