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Hall devices using anomalous Hall effect of ferromagnetic Fe–Sn nanocrystalline thin films exhibit high sensitivity for detection of magnetic field comparable to that of semiconductor devices. For applying this material to magnetometry, superior detectivity owing to low electrical noise is a critical requirement. We investigate the magnetic-field sensitivity and the low-frequency noise spectrum as a detectivity for Fe–Sn Hall-cross devices. We detected typical noise behavior of 1/f and thermal noise. The noise-equivalent magnetic field reaches 0.3 μT/Hz1/2, which is comparable to that of semiconductor-based Hall sensors. A sufficiently low-noise spectrum evidences the potential applicability of Fe–Sn to Hall magnetometry. [ABSTRACT FROM AUTHOR]

We experimentally investigated the asymmetric transmission probabilities of spin-up and spin-down electrons at a (001)-Fe/Ag interface, which result in a highly spin-dependent interface resistance () that improves the magnetoresistive outputs of giant magnetoresistive devices whose ferromagnetic layers comprise only 3d transitional materials such as FeCo-based alloys. We quantitatively determined the spin-dependent interfacial parameters at FexCo100-x/Ag interfaces that were tuned by varying the Fe concentration x. Among the interfaces, the highest interface resistance of 0.65 mΩ·µm2 was obtained with an of 1.89 mΩ·µm2, which corresponds to ARF/N↑ ∼ 1.08 mΩ·µm2 and ARF/N↓ ∼ 7.98 mΩ·µm2 at a (001)-Fe/Ag interface. [ABSTRACT FROM AUTHOR]