Search

This work investigates the effect of X-ray accelerating voltage (Vacc) on the structural repair of HfZrOx ferroelectric random-access memory. We found that X-rays are able to break the molecular bonds due to missing electrons, thereby repairing the material structure. To further understand the influence of X-ray Vaccon structural repair, we conducted different Vaccconditions, with results showing that there is only a small improvement under high Vacc. However, the improvement is much clearer under low Vacc. To illuminate these results, we propose a physical model which is based on different X-ray energies that will have different energy penetration capacities.