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The exchange bias (EB) is an effective fundamental and applicational method to realize magnetic hysteresis loop shifting. However, further manipulation of EB unidirectional anisotropy is difficult after setup using either field deposition or post-annealing. In this work, we experimentally show a new approach to control the magnetic hysteresis loop bias in a [Co(0.2)/Pd(1)]5/CoFeB orthogonal exchange-spring (ES) coupling system, where the direction and strength of unidirectional anisotropy can be easily manipulated by applying an external magnetic field.

Comprehensive crystal structure analysis was performed for a BiFeO3thin layer (?30 nm) grown on a SrTiO3substrate using cross-sectional transmission electron microscopy along three different zone axes. Nano-beam electron diffraction patterns combined with structure factor calculations and high-resolution transmission electron microscopy images unambiguously revealed that the BiFeO3thin layer grew with a rhombohedral structure identical to its bulk form. No evidence of monoclinic and/or tetragonal distortion was found. The rhombohedral BiFeO3thin layer was found to grow onto SrTiO3by maintaining an epitaxial relationship in a manner minimizing the lattice mismatch at the BiFeO3/SrTiO3interface.

The magnetic tunnel junctions (MTJs) with a soft magnetic CoFeSiB amorphous electrode and a MgO barrier layer were fabricated. A double annealing process was carried out to obtain the linear resistance response to the external magnetic field. The effect of the annealing temperature on the sensitivity of magnetic sensors was systematically investigated. We achieved a high sensitivity of 40%/Oe, where the sensitivity is defined as TMR/(2Hk), where TMR is the tunnel magnetoresistance ratio and Hkis the magnetic anisotropy field of the free layer of MTJs.

The tunnel magnetoresistance (TMR) ratio in a magnetic tunnel junction (MTJ) with an L10-Mn62Ga38/Fe/MgO/CoFe structure was considerably improved by Fe layer insertion. A maximum TMR ratio of 24% was observed in an MTJ with a Fe thickness of 1.1 nm at room temperature, which corresponded to a 57% TMR ratio in the case of a complete antiparallel magnetization configuration. Fe layer thickness dependences of the magnetization curve and TMR effect were also investigated. It was revealed that the magnetization of Fe on 30-nm-thick MnGa could be fixed in a perpendicular direction when the thickness of the Fe was below 2.0 nm.

The tunnel magnetoresistance (TMR) ratio in a magnetic tunnel junction (MTJ) with an L10-Mn62Ga38/Fe/MgO/CoFe structure was considerably improved by Fe layer insertion. A maximum TMR ratio of 24% was observed in an MTJ with a Fe thickness of 1.1 nm at room temperature, which corresponded to a 57% TMR ratio in the case of a complete antiparallel magnetization configuration. Fe layer thickness dependences of the magnetization curve and TMR effect were also investigated. It was revealed that the magnetization of Fe on 30-nm-thick MnGa could be fixed in a perpendicular direction when the thickness of the Fe was below 2.0 nm.

Fully epitaxial current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices with a Co2Fe0.4Mn0.6Si/Ag/Co2Fe0.4Mn0.6Si structure were fabricated. The bottom and top Co2Fe0.4Mn0.6Si layers had good crystallinity and an L21-ordered structure. In addition, we found from scanning transmission electron microscopy (STEM) measurements that both Co2Fe0.4Mn0.6Si/Ag and Ag/Co2Fe0.4Mn0.6Si interfaces were very flat and sharp. The magnetoresistance (MR) ratio at room temperature was 74.8%, the largest to date for CPP-GMR devices. CPP-GMR devices with Co2Fe0.4Mn0.6Si electrodes would be very useful for the next generation of hard disk drive (HDD) read heads.

The tunnel magnetoresistance (TMR) effect with a perpendicularly magnetized D022-Mn3-?Ga (?= 0.6) electrode was investigated in epitaxially grown D022-Mn3-?Ga (30)/Mg (dMg)/MgO (2)/CoFe (2.5) (nm) magnetic tunnel junctions (MTJs). The maximum TMR ratio of 9.8% (22.1%) was achieved at 300 K (10 K) with dMg= 0.4 nm. The bias voltage dependence of differential conductance spectra suggests the existence of a coherent tunneling process in the MTJs. First principles calculations of band dispersion relations and tunneling transmittance in a Mn3Ga/MgO/Mn3Ga structure were also performed. The results revealed the existence of ?1-bands in Mn3Ga and demonstrated the possibility of a coherent tunneling process existing in the MTJ.

The tunnel magnetoresistance (TMR) effect with a perpendicularly magnetized D022-Mn3-dGa (d= 0.6) electrode was investigated in epitaxially grown D022-Mn3-dGa (30)/Mg (dMg)/MgO (2)/CoFe (2.5) (nm) magnetic tunnel junctions (MTJs). The maximum TMR ratio of 9.8% (22.1%) was achieved at 300 K (10 K) with dMg = 0.4 nm. The bias voltage dependence of differential conductance spectra suggests the existence of a coherent tunneling process in the MTJs. First principles calculations of band dispersion relations and tunneling transmittance in a Mn3Ga/MgO/Mn3Ga structure were also performed. The results revealed the existence of D1-bands in Mn3Ga and demonstrated the possibility of a coherent tunneling process existing in the MTJ.

Gilbert damping is reported in perpendicularly magnetized Ni/Co multilayer films with Pt buffer and capping layers, and investigated through the time-resolved magneto-optical Kerr effect under various applied magnetic field strengths and directions. Both damping constant ? and perpendicular magnetic anisotropy energy Kudepend strongly on layer thickness and bilayer periodicity, and rise to approximately 0.08 and 8 Merg/cm3, respectively. The Gilbert damping rate depends linearly on inverse multilayer thickness, indicating that large damping in the Ni/Co multilayers stems from its interfaces in contact with the Pt layers.

We have investigated magnetic field strength (up to 10 kOe) and angle dependences of spin dynamics in 4-nm-thick films of CoCrPt alloys with perpendicular magnetic anisotropy using the all-optical time-resolved magneto-optical Kerr effect (TRMOKE). The comprehensive TRMOKE measurements have indicated the Gilbert damping constant ? of 0.05 for the alloy film with low coercivity. The experiments also indicated that ? values for the alloy films deposited at higher temperatures with higher coercivities were also no greater than 0.06.

We report for the first time that the dynamic magnetic intermediate state (DMI) was observed at a speed of several ns during spin transfer switching for MgO-based magnetic tunnel junctions (MTJs). The DMI was observed as slow resistance oscillation at the center of the parallel to anti-parallel state by single shot time domain measurements. The DMI is observable at certain current amplitudes. The outbreak probability decreases with further current increase. We concluded that the DMI originates from inhomogeneous magnetization behavior. On the other hand, previous single shot time domain measurements have shown only for single-domain-like magnetization behavior.

The atomic ordering of Co2MnSi (CMS) full-Heusler film and the interface structure of CMS/MgO/CMS magnetic tunnel junctions (MTJs) were investigated by high-angle annular dark-field scanning transmission electron microscopy (HAADF STEM). We observed the atomic ordering of L21and B2 structures of CMS from the atomic number (Z) contrast STEM images. We also confirmed that the interface structure consists of the layer next to the Co layer terminating in the CMS to MgO layer from the layer periodicity along the [001] direction, however, site-disorder exists between two atomic layers at the termination of CMS, including locally L21-ordered MnSi terminated structure.

CoFeB/MgO/CoFeB/MgO/CoFeB double barrier magnetic tunnel junctions (DBMTJs) with thin middle layers were fabricated on SiO2/Si(001) substrates by r.f. magnetron sputtering. We successfully obtained a large tunnel magnetoresistance of 1056% at room temperature in a DBMTJ with a middle CoFeB layer thickness of 1.2 nm that was fabricated at a relatively low post-deposition annealing temperature of 350 °C. This DBMTJ also realized sharp magnetization switching in the free middle CoFeB layer, which is attributed to strong antiferromagnetic coupling between the exterior CoFeB and PtMn layers. These favorable magnetoresistive properties offer interesting possibilities for developing practical spintronics applications and noble magnetotransport physics.

The electrical properties of leaky ferroelectric BiFeO3thin films were evaluated by using a high-speed positive-up-negative-down (PUND) measurement technique. The leakage current density was estimated from the gradient of the pulse response when a constant electric field was applied. The relative permittivity was estimated from an abrupt decrement when the applied field was removed. The twofold remanent polarization without the influence of the leakage current was estimated by subtracting the contribution of a paraelectric component from the abrupt increment in the pulse response when a positive pulse was applied.