1. Phase change behavior in titanium-doped Ge2Sb2Te5 films.
- Author
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Wei, S. J., Zhu, H. F., Chen, K., Xu, D., Li, J., Gan, F. X., Zhang, X., Xia, Y. J., and Li, G. H.
- Subjects
PHYSICS research ,PHASE transitions ,TITANIUM ,X-ray photoelectron spectroscopy ,ELLIPSOMETRY ,X-ray diffractometers - Abstract
The titanium-doped Ge
2 Sb2 Te5 films were deposited on Si(100) substrates by comagnetron sputtering method. The titanium concentrations in those films were determined by x-ray photoelectron spectroscopy. The influence of Ti doping upon phase change characteristics of the samples has been investigated by x-ray diffraction and a temperature-regulable UVISEL™ typed spectroscopic ellipsometry. With the augmentation of Ti doping concentration, the crystalline temperatures of the films went up while annealing, and the face-centered-cubic phase of them had high thermal stability because of the bond making between Ti and Te elements partly. [ABSTRACT FROM AUTHOR]- Published
- 2011
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