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We have compared the device performance of In0.7Ga0.3As HfO2 gate dielectric tunneling field-effect-transistors (TFETs) using p++/i or p++/n+ tunneling junctions. Devices with p++/n+ tunneling junctions show 61% and 20% higher current at Vg-Vth=0.5 and 2 V compared to the ones with p++/i junctions. These p++/n+ TFETs exhibit an on-current of 60 μA/μm and a minimum subthreshold swing of 84 mV/dec. Device characteristics of TFETs using p++/n+ tunneling diodes with various n+ region doping concentrations have been simulated, results indicate the doping concentration of the n+ region plays an important role in determining the on-current and providing a well gate-controlled tunneling behavior. [ABSTRACT FROM AUTHOR]

We present InP metal-oxide-semiconductor capacitors (MOSCAPs) and metal-oxide-semiconductor field-effect transistors (MOSFETs) with stacked HfAlOx/HfO2 gate dielectric deposited by atomic layer deposition. Compared with single HfO2, the use of stacked HfAlOx/HfO2 results in better interface quality with InP substrate, as illustrated by smaller frequency dispersion and lower leakage current density. The equivalent oxide thickness of MOSCAPs with 10 Å HfAlOx/25 Å HfO2 stacked gate dielectric is 12 Å. The MOSFETs with this gate dielectric achieve two times higher transconductance than those with single 35 Å HfO2. They also exhibit drive current of 60 mA/mm and subthreshold swing of 83 mV/decade for 5 μm gate length. [ABSTRACT FROM AUTHOR]