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1. Electrical compensation via vacancy-donor complexes in arsenic-implanted and laser-annealed germanium.

Author

Kalliovaara, T., Slotte, J., Makkonen, I., Kujala, J., Tuomisto, F., Milazzo, R., Impellizzeri, G., Fortunato, G., and Napolitani, E.

Subjects
*COMPLEX compounds, *ANNEALING furnaces, *LASER annealing, *ARSENIC, *DOPING agents (Chemistry), *PASSIVATION
Abstract

Highly n-type Ge attained by shallow As implantation and excimer laser annealing was studied with positron annihilation spectroscopy and theoretical calculations. We conclude that a high concentration of vacancy-arsenic complexes was introduced by the doping method, while no sign of vacancies was seen in the un-implanted laser-annealed samples. The arsenic bound to the complexes contributes substantially to the passivation of the dopants. Published by AIP Publishing. [ABSTRACT FROM AUTHOR]

Published
2016
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