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Inorganic CsPbI3 perovskite solar cells (PSCs) have garnered considerable attention due to their high thermal stability and promising application in tandem devices. However, further advancement of the performance of CsPbI3 PSCs is restricted by severe nonradiative recombination, which is related to substantial defects and mismatched energy levels. Herein, the versatile graphene quantum dots (GQDs) are introduced to modify the CsPbI3 surface to improve interface contact and mitigate energy loss. GQD modification can not only effectively passivate surface defects via coordinating with the undercoordinated Pb2+ but also improve energy level alignment, contributing to efficient charge extraction and suppression of nonradiative recombination. Consequently, GQDs-based inverted CsPbI3 devices deliver a champion power conversion efficiency (PCE) of 18.98% with a high open-circuit voltage (VOC) of 1.141 V and are greatly superior to the control device obtaining a poor PCE of 13.29% with a VOC of 0.986 V. Moreover, GQDs can form a protective layer at the perovskite interface to resist external invasion, significantly boosting the device stability. Our findings establish the promising application of GQD modification as a compelling strategy for achieving high performance inorganic photovoltaic devices. [ABSTRACT FROM AUTHOR]

An inorganic CsPbI2Br perovskite has garnered significant interest due to its outstanding photoelectrical properties in recent years. However, CsPbI2Br-based perovskite solar cells (PSCs) generally suffer from large energy loss, hindering their further development. Herein, we proposed a facile and effective approach to dope the ZnO electron transporting layer (ETL) with alkaline earth metal ions to boost the photovoltaic performance of CsPbI2Br PSCs. Particularly, the ZnO ETL doped with Ca2+ can simultaneously ameliorate electron transport, energy level alignment, and the quality of the upper CsPbI2Br film, thus resulting in faster charge extraction and suppressed charge recombination. Consequently, the ZnO:Ca-based PSC achieves a champion power conversion efficiency (PCE) of 16.39% with an excellent VOC of 1.292 V, while the control ZnO-based PSC just exhibits an inferior PCE of 14.22% with a VOC of 1.178 V. Furthermore, the ZnO:Ca-based devices also present considerable enhancements in device stability without encapsulation. Our work offers a promising strategy to mitigate the energy loss toward efficient and stable PSCs. [ABSTRACT FROM AUTHOR]

Efficient electron transport layer-free perovskite solar cells (ETL-free PSCs) are promising designs because they offer low-cost, simpler device configuration and greatly promote the large area flexible application of PSCs. Meanwhile, compared to traditional PSCs with ETL, the development of ETL-free PSCs is hindered by their low performance due to serious interfacial energy loss. Herein, we reveal that ETL-free devices with relatively low carrier lifetimes of perovskite films exhibit more substantial photogenerated carrier loss, resulting in a lower electron-injection rate at the FTO (fluorine-containing tin oxide)/perovskite interface, which is mainly responsible for the performance loss. Moreover, we demonstrate that improving the carrier lifetimes of perovskite films can remedy the poor carrier extraction efficiency at the FTO/perovskite interface through three typical perovskite films. Similarly, for all-inorganic perovskite with lower carrier lifetime and hole transport layer-free devices, prolonging carrier lifetime may be an important measure to improve the device performance. Benefiting from this discovery, increasing the carrier lifetime of the perovskite films can counterbalance the inferior device interfaces, endowing the ETL-free PSCs with high performance close to that of the ETL devices. Our research provides insights into ETL-free PSCs and offers opportunities for high-performance ETL-free PSC device design. [ABSTRACT FROM AUTHOR]

CsPbI2Br all-inorganic perovskite solar cells (PSCs) have attracted much attention due to their suitable bandgap and outstanding thermostability. However, the large energy loss of CsPbI2Br PSCs generally endows low open circuit voltage (VOC) and unsatisfactory power conversion efficiency (PCE), which severely hamper its further development. Herein, we proposed a facile route to modify the ZnO electron transporting layer (ETL) by in situ chemical doping strategy with metal ions. The doped ZnO ETL with Pb(Ac)2 or CsAc cannot only effectively tune its energy levels, conductivity, and charge extraction but also ameliorate the crystallization and morphology of upper perovskite films. Particularly, Pb(Ac)2-doped ZnO (ZnO:Pb) induces an energy level offset of 0.15 eV relative to the conduction band of CsPbI2Br with largely reduced Ohmic loss. Thus, the highest VOC is significantly boosted to above 1.3 V for the CsPbI2Br PSCs with a champion PCE of 16.36%, while the reference PSC just yields a moderate PCE of 14.43% with a low VOC of 1.168 V. Moreover, considerable improvements in device stability are achieved for the PSCs with doped ZnO ETLs than those of the ZnO-based device. Our work provides a promising strategy to alleviate the VOC deficit toward the attainment of highly efficient and stable PSCs. [ABSTRACT FROM AUTHOR]