1. Polarization of edge emission from III-nitride light emitting diodes of emission wavelength from 395 to 455 nm.
- Author
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Jia, Chuanyu, Yu, Tongjun, Mu, Sen, Pan, Yaobo, Yang, Zhijian, Chen, Zhizhong, Qin, Zhixin, and Zhang, Guoyi
- Subjects
QUANTUM wells ,ELECTROLUMINESCENCE ,INDIUM ,LIGHT emitting diodes ,OPTICAL polarization - Abstract
Polarization-resolved edge-emitting electroluminescence of InGaN/GaN multiple quantum well (MQW) light emitting diodes (LEDs) from 395 to 455 nm was measured. Polarization ratio decreased from 3.2 of near-ultraviolet LEDs (395 nm) to 1.9 of blue LEDs (455 nm). Based on TE mode dominant emissions in InGaN/GaN MQWs, compressive strain in well region favors TE mode, indium induced quantum-dot-like behavior leads to an increased TM component. As wavelength increased, indium enhanced quantum-dot-like behavior became obvious and E∥C electroluminescence signal increased thus lower polarization ratio. Electroluminescence spectrum shifts confirmed that quantum dotlike behaviors rather than strain might be dominant in modifying luminescence mode of InGaN/GaN MQWs from near ultraviolet to blue. [ABSTRACT FROM AUTHOR]
- Published
- 2007
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