1. Size self-scaling effect in stacked InAs/InAlAs nanowire multilayers.
- Author
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Sun, Z. Z., Yoon, S. F., Wu, J., and Wang, Z. G.
- Subjects
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NANOWIRES , *ELECTRIC wire , *NANOSTRUCTURED materials , *MICROSTRUCTURE , *NANOTECHNOLOGY , *PHYSICS , *PHYSICAL sciences - Abstract
Size self-scaling effect in stacked InAs/In0.52Al0.48As nanowires on InP substrates is revealed, i.e., the base width and height of the InAs nanowires have clear proportional dependence on thickness of the InAlAs spacer layer used in different samples. The photoluminescence wavelength from different samples, which varies between 1.3 and 1.9 μm, is also found closely correlated to the size self-scaling effect. This phenomenon can be well explained in the context of formation mechanism and growth features of the InAs/InAlAs nanowire arrays. The finding illustrates a degree of freedom to control the structural and optical properties of strained self-organized nanostructures. [ABSTRACT FROM AUTHOR]
- Published
- 2004
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