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The photonic spin Hall effect (PSHE) is analogous to the electronic spin Hall effect, which has substantial potential for optoelectronic applications. However, PSHE-based devices are rarely studied, and manipulating the PSHE by charge current has remained elusive thus far. In this paper, we demonstrate current-induced switching of PSHE in the Ce1Dy2Al0.42Fe4.58O12 thin film capping with Pt electrodes, which is mediated by spin–orbit torques at the Pt/Ce1Dy2Al0.42Fe4.58O12 interface. The results show that the transverse beam shifts related to the PSHE can be reversed by applying a small order of magnitude charge current (∼108 A·m−2) to the Pt layer in opposite directions, which predicts low dissipation in our proposed heterostructure. In addition, by applying an in-plane magnetic field, the saturation beam shifts can be increased, which can significantly enhance the switching ratio. [ABSTRACT FROM AUTHOR]

Noncollinear antiferromagnet Weyl semimetal Mn3Sn has recently attracted great research interest. Although large anomalous Hall effect (AHE), anomalous Nernst effect (ANE), and magneto-optical effect have been observed in Mn3Sn, most studies are based on single crystals. So far, it is still challenging to grow high quality epitaxial Mn3Sn thin films with transport and optical properties comparable to their single crystal counterparts. Here, we report the structure and magneto-optical and transport properties of epitaxial Mn3Sn thin films fabricated by pulsed laser deposition (PLD). Highly oriented Mn3+xSn1−x (0001) and (11 2 ¯ 0) epitaxial films are growth on single crystalline Al2O3 and MgO substrates. Large anomalous Hall effect up to Δ ρ H = 3.02 μ Ω cm and longitudinal magneto-optical Kerr effect with |θK| = 38.1 mdeg at 633 nm wavelength are measured at 300 K, which are comparable to Mn3Sn single crystals. Our work demonstrates that high quality Mn3Sn epitaxial thin films can be fabricated by PLD, paving the way for future device applications. [ABSTRACT FROM AUTHOR]

Phase change materials, such as vanadium dioxide (VO2) and Titanium dioxide (Ti2O3) have received extensive attention because of the dramatic changes in their intrinsic properties during phase transitions. However, due to the rapid transition rate and wide dynamics, monitoring of processes is challenging. Previous detection methods are lack of speed and simplicity and require multiple interventions, which largely introduce human factors influencing the results and make it difficult to guarantee the accuracy and visualization. In this paper, the photonic spin Hall effect is used for real-time detection and highly sensitive analysis of the phase transition process of VO2 films. By incorporating with quantum weak measurement, the photonic spin-Hall shift acts as the pointer, and the phase transition process of VO2 is characterized effectively. The high measurement resolution with 63 S/(m μm) is achieved due to weak-value amplification. In our scheme, it does not involve any mechanical adjustment of optical components, thus enabling real-time, visual, non-contact detection of dynamic phase transition processes. [ABSTRACT FROM AUTHOR]

Magnetic thin films with perpendicular magnetic anisotropy (PMA) offer opportunities for studying magnetostatic forward volume mode (MSFVM) spin waves with isotropic propagation. Here, we realize the full reciprocal MSFVM spin wave propagation in a 30-nm-thick manganese doped yttrium iron garnet (YIG) with PMA by only applying an external field of 5 mT. The external magnetic field required for investigating the MSFVM spin waves in YIG is reduced by 34 times compared to the in-plane magnetized one. The spin wave group velocity and decay length are also investigated. Our finding paves the way for applications of isotropic magnonic computing systems and logic devices. [ABSTRACT FROM AUTHOR]

We have determined the effective work function ([uppercase_phi_synonym]m,eff) of thin-film sputter-deposited Pr0.7Ca0.3MnO3 (PCMO) on atomic-layer-deposited ZrOx. Pt/PCMO/ZrOx/SiO2/Si and Pt/ZrOx/SiO2/Si metal-oxide-semiconductor (MOS) capacitors were fabricated. The [uppercase_phi_synonym]m,eff were extracted from capacitance-voltage curves of the MOS capacitors by using flat-band voltage versus effective-oxide-thickness plots. PCMO was crystallized using a high-temperature anneal step and crystallinity was confirmed by x-ray diffraction and transmission electron microscopy. [uppercase_phi_synonym]m,eff of polycrystalline PCMO and Pt on ZrOx was determined to be 5.43 eV and 5.40 eV, respectively. The significantly higher [uppercase_phi_synonym]m,eff of PCMO is attributed to the presence of oxygen-rich PCMO(002)/ZrOx interfaces as indicated by our density-functional-theory calculations. [ABSTRACT FROM AUTHOR]