1. Organic transistor nonvolatile memory with an integrated molecular floating-gate/tunneling layer.
- Author
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Xu, Ting, Guo, Shuxu, Xu, Meili, Li, Shizhang, Xie, Wenfa, and Wang, Wei
- Subjects
ORGANIC field-effect transistors ,NONVOLATILE memory ,FULLERENES ,SWITCHING circuits ,QUANTUM tunneling - Abstract
Floating-gate based organic field-effect transistor (FG-OFET) nonvolatile memories (NVMs) are demonstrated based on an integrated molecular floating-gate/tunneling layer, in which small molecular fullerene (C
60 ) acting as the floating-gate and long-chain alkane molecule tetratetracontane acting as the tunneling layer are synchronously prepared by vacuum thermal evaporation. The effects of the thickness and the component of the integrated floating-gate/tunneling layer on the performances of memory are investigated. As a result, a high performance FG-OFET NVM is achieved, with a large memory window of 8.0 V on average, stable retention capability over 10 years, and reliable switching endurance over 100 cycles at the programming/erasing voltages of ±40 V, at an optimized condition. [ABSTRACT FROM AUTHOR]- Published
- 2018
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