Search

In the recently researched Sn-contained perovskite solar cells (PSCs), limited work is focused on corrosion of a metal electrode, which is recognized as the obstacle of efficient and stable devices. Here, it is found that a pure Sn based PSC shows the most serious and quick corrosion of an Ag electrode, compared with Pb and Sn–Pb PSCs. I2, SnOX, and AgI are the main products of the aged Ag electrode in Sn based PSCs, which greatly differed from Pb and Sn–Pb PSCs. Oxidation of FASnI3 under O2/H2O produces aggressive I2, together with gaseous FA and diffusive I−, degrading the PVK film and Ag electrode greatly. This work highlights the corrosion velocity and mechanism of Ag electrodes in Sn-contained PSCs, which may help to find out possible solutions to circumvent the instable issue. [ABSTRACT FROM AUTHOR]

Efficient electron transport layer-free perovskite solar cells (ETL-free PSCs) are promising designs because they offer low-cost, simpler device configuration and greatly promote the large area flexible application of PSCs. Meanwhile, compared to traditional PSCs with ETL, the development of ETL-free PSCs is hindered by their low performance due to serious interfacial energy loss. Herein, we reveal that ETL-free devices with relatively low carrier lifetimes of perovskite films exhibit more substantial photogenerated carrier loss, resulting in a lower electron-injection rate at the FTO (fluorine-containing tin oxide)/perovskite interface, which is mainly responsible for the performance loss. Moreover, we demonstrate that improving the carrier lifetimes of perovskite films can remedy the poor carrier extraction efficiency at the FTO/perovskite interface through three typical perovskite films. Similarly, for all-inorganic perovskite with lower carrier lifetime and hole transport layer-free devices, prolonging carrier lifetime may be an important measure to improve the device performance. Benefiting from this discovery, increasing the carrier lifetime of the perovskite films can counterbalance the inferior device interfaces, endowing the ETL-free PSCs with high performance close to that of the ETL devices. Our research provides insights into ETL-free PSCs and offers opportunities for high-performance ETL-free PSC device design. [ABSTRACT FROM AUTHOR]

CsPbI2Br all-inorganic perovskite solar cells (PSCs) have attracted much attention due to their suitable bandgap and outstanding thermostability. However, the large energy loss of CsPbI2Br PSCs generally endows low open circuit voltage (VOC) and unsatisfactory power conversion efficiency (PCE), which severely hamper its further development. Herein, we proposed a facile route to modify the ZnO electron transporting layer (ETL) by in situ chemical doping strategy with metal ions. The doped ZnO ETL with Pb(Ac)2 or CsAc cannot only effectively tune its energy levels, conductivity, and charge extraction but also ameliorate the crystallization and morphology of upper perovskite films. Particularly, Pb(Ac)2-doped ZnO (ZnO:Pb) induces an energy level offset of 0.15 eV relative to the conduction band of CsPbI2Br with largely reduced Ohmic loss. Thus, the highest VOC is significantly boosted to above 1.3 V for the CsPbI2Br PSCs with a champion PCE of 16.36%, while the reference PSC just yields a moderate PCE of 14.43% with a low VOC of 1.168 V. Moreover, considerable improvements in device stability are achieved for the PSCs with doped ZnO ETLs than those of the ZnO-based device. Our work provides a promising strategy to alleviate the VOC deficit toward the attainment of highly efficient and stable PSCs. [ABSTRACT FROM AUTHOR]

In inverted perovskite solar cells, the [6,6]-phenyl-C61-butyric acid methyl ester (PCBM)/Ag back interface is quite important because serious recombination occurs and H2O/O2 directly attacks this interface to induce device instability. Here, bi-functional dipole layers are applied at the interface aiming at improving the charge transport and device stability simultaneously. Silane with -CF3 end group anchored on the PCBM surface induces more effective dipole effect than that with (CH2)7-CH3 end functional silane, bending the interface energy level to promote electron transport and reduce recombination. The hydrophobic nature of -CF3 also enhances the durability of the device. This work highlights the back surface dipole management method to achieve efficient and stable perovskite solar cells. [ABSTRACT FROM AUTHOR]

All-inorganic halide perovskites (AIHPs) have become one of the most promising materials for commercial perovskite photovoltaics owing to their enhanced efficiency and thermodynamic stability. Output instability, such as current hysteresis, is stressed in organic-inorganic hybrid perovskite photovoltaics but is neglected in AIHP solar cells. Here, the origin and suppression of current hysteresis in AIHP solar cells are addressed from a microscopic viewpoint. The incorporation of fullerene into AIHP films efficiently suppresses ion migration, which alleviates the macroscopic current hysteresis in solar cells. This result is confirmed by both Kelvin probe force microscopy and conductive atomic force microscopy measurements. Our results provide an advanced understanding of the microscopic properties of AIHPs but also clearly clarify how to suppress the macroscopic current hysteresis, which further inspires the optimization of solar cells up to the levels of organic–inorganic hybrid counterparts. [ABSTRACT FROM AUTHOR]

The tunability of the carrier/conduction polarity of halide perovskite via intrinsic defect self-doping makes it possible to implement a simple p–n heterojunction perovskite solar cell. Here, approaching 16% efficient prototype device of the p-type spiro-MeOTAD/n-type MAPbI3 heterojunction perovskite solar cell is demonstrated via synergetic energy band and interface engineering. The n-type perovskite is enabled by self-doping associated with excess PbI2, avoiding a redundant electron transport layer, while the oxygen-induced p-type extrinsic doping (oxidation) of spiro-MeOTAD ensures its high hole conductivity and Ohmic contact with Au back electrode. Furthermore, ITO's effective work function is reduced by the polar molecular modification layer to ensure its Ohmic contact with perovskite. Also, the functional groups of this modification layer effectively passivate the front interface defects, contributing to the enhanced device performance observed. This work highlights the great potential of facile energy band and interface engineering for efficient and simple-structured perovskite solar cells. [ABSTRACT FROM AUTHOR]