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Cadmium oxide (CdO) has recently attracted attention as a material with controllable properties tailored for optoelectronic and nanophotonic devices due to its superior mobility. However, its potential application in near-infrared (NIR) remains to be explored. In this work, we demonstrate that the epsilon-near-zero (ENZ) wavelength and nonlinear optical properties of CdO films can be effectively tuned by Mo doping. The results show that Mo doping increases the electron concentration as well as improve the crystalline quality of CdO. With increasing Mo doping, we achieve blueshifts of the ENZ wavelength from 2.89 to 1.56 μm. The nonlinear absorption (NLA) behavior at 1550 nm changes from reverse saturable absorption to saturable absorption with increasing Mo content. Moreover, significant improvement in NLA performance with nonlinear absorption coefficient β = −72 cm/GW is observed at the highest doping content. Our work shows that doped CdO films with tunable optoelectrical and nonlinear optical properties can be an ideal candidate for optoelectronic and nanophotonic application in the NIR region. [ABSTRACT FROM AUTHOR]

In this paper, we present a glass-based double-side cascade film stack structure for visible-infrared ultrabroadband absorption. The proposed structure demonstrates an average absorption as high as ∼95% over an ultrawide range of wavelengths from 0.4 μm to 20 μm. The high absorption feature of the different bandgap materials is applied in this absorption device to realize the ultrabroadband absorption, combining with the metal-dielectric-like configuration for those unmatched-admittance wavelengths and the graded index profile arrangement for the 0.4–2.5 μm band. The proposed ultrabroadband absorber shows a great angular tolerance up to 60° with the average absorption of 90% remaining. The proposed approach can have tremendous potential in fields of optical sensing, camouflage, optical imaging, passive cooling, and sustainable power generation, profiting from the good mechanical characteristics of this compact multilayer film structure and the low manufacture costs with the simple physical vapor deposition. [ABSTRACT FROM AUTHOR]