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Electron traps in AlGaN/GaN high electron mobility transistors were studied by combining theoretical and experimental methods. Energy levels about EC-0.9 eV due to irradiation are identified by deep-level transient spectroscopy (DLTS). Two electron traps, H1 (EC-0.63 eV) and H2 (EC-0.9 eV), were observed in the DLTS spectra. H1 was produced in device or material manufacturing, and H2 was caused by displacement damage. First, we reported that the signal peak of H2 can contribute from three defects labeled H2-1, H2-2, and H2-3 with energies EC-0.77 eV, EC-0.9 eV, and EC-0.98 eV, respectively. According to defect migration temperature and first principles calculation results, it is found that different configurations of di-nitrogen vacancy structures are the source of EC-0.77 eV and EC-0.9 eV signals. The defect of EC-0.98 eV is more stable at high temperatures, which may be related to gallium vacancy. [ABSTRACT FROM AUTHOR]