1. Characterization of (001) β-Ga2O3 Schottky diodes with drift layer grown by MOCVD.
- Author
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P. Sundaram, Prakash, Liu, Fengdeng, Alema, Fikadu, Osinsky, Andrei, Jalan, Bharat, and Koester, Steven J.
- Subjects
SCHOTTKY barrier diodes ,METAL organic chemical vapor deposition ,EPITAXIAL layers ,BREAKDOWN voltage - Abstract
Growing a thick high-quality epitaxial layer on the β-Ga
2 O3 substrate is crucial in commercializing β-Ga2 O3 devices. Metal organic chemical vapor deposition (MOCVD) is also well-established for the large-scale commercial growth of β-Ga2 O3 and related heterostructures. This paper presents a systematic study of the Schottky barrier diodes fabricated on two different Si-doped homoepitaxial β-Ga2 O3 thin films grown on Sn-doped (001) and (010) β-Ga2 O3 substrates by MOCVD. X-ray diffraction analysis of the MOCVD-grown sample, room temperature current density–voltage data for different Schottky diodes, and C–V measurements are presented. Diode characteristics, such as ideality factor, barrier height, specific on-resistance, and breakdown voltage, are studied. Temperature dependence (170–360 K) of the ideality factor, barrier height, and Poole–Frenkel reverse leakage mechanism are also analyzed from the J–V–T characteristics of the fabricated Schottky diodes. [ABSTRACT FROM AUTHOR]- Published
- 2023
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