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We demonstrate a method for broadband tunable continuous frequency electric field measurement based on the DC Stark effect in Rydberg atoms. In our experiment, we place a pair of parallel electrode plates inside the atomic vapor cell, utilizing the DC Stark effect to induce splitting and shifting of the Rydberg energy levels, thereby altering the resonance frequency of the Stark subpeaks. By employing the 52D5/2 Rydberg state, we achieve electric field measurements in the frequency range of 5.083–14.470 GHz. At an EDC of 3.45 V/cm and a resonant microwave frequency of 14.470 GHz, using heterodyne technology, the microwave electric field sensitivity is 538.89 μV/cm/√Hz, with a linear dynamic range of 23 dB. In comparison, a Rydberg heterodyne receiver with an EDC of 0 V/cm and a resonant microwave frequency of 5.083 GHz has a sensitivity of 5.43 μV/cm/√Hz and a linear dynamic range of 51 dB. This work will promote the study of atomic microwave receivers in continuous microwave frequency measurement. [ABSTRACT FROM AUTHOR]

Momentum resolved 4D-STEM, also called center of mass (CoM) analysis, has been used to measure the long range built-in electric field of a silicon p–n junction. The effect of different STEM modes and the trade-off between spatial resolution and electric field sensitivity are studied. Two acquisition modes are compared: nanobeam and low magnification (LM) modes. A thermal noise free Medipix3 direct electron detector with high speed acquisition has been used to study the influence of low electron beam current and millisecond dwell times on the measured electric field and standard deviation. It is shown that LM conditions can underestimate the electric field values due to a bigger probe size used but provide an improvement of almost one order of magnitude on the signal-to-noise ratio, leading to a detection limit of 0.011 MV cm − 1. It is observed that the CoM results do not vary with acquisition time or electron dose as low as 24 e−/A2, showing that the electron beam does not influence the built-in electric field and that this method can be robust for studying beam sensitive materials, where a low dose is needed. [ABSTRACT FROM AUTHOR]

This paper reports on electric field measurements, using the electric field-induced second harmonic (E-FISH) method, sampling the spatial structure and temporal development of DC-driven positive streamer coronas in atmospheric-pressure air at relevant timescales to examine the self-pulsating behavior of the discharge. The discharge is triggered from a point-to-plate geometry and consists of transient coronas, which bridge the inter-electrode gap and pulsate at about 3 kHz, superimposed with a persisting glow corona. The measurements presented challenge the phenomenological explanation for the pulsations based on field recovery at the anode driven by the evacuation of positive ions by electric drift effects and hint at a propagating wave-like feature from the plate-cathode to the tip-anode. [ABSTRACT FROM AUTHOR]

We demonstrate a continuously tunable electric field measurement based on the far off-resonant AC stark effect in a Rydberg atomic vapor cell. In this configuration, a strong far off-resonant field, denoted as a local oscillator (LO) field, acts as a gain to shift the Rydberg level to a high sensitivity region. An incident weak signal field with a few hundreds of kHz difference from the LO field is mixed with the LO field in the Rydberg system to generate an intermediate frequency signal, which is read out by Rydberg electromagnetically induced transparency (Rydberg-EIT) spectroscopy. Not like resonant EIT-Autler–Townes spectra, we realize the electric field measurement of the signal frequency from 2 to 5 GHz using a single Rydberg state. The detectable field strength is down to 2.25 μV/cm with sensitivity of the electrometry 712 nV cm−1 Hz−1/2, and a linear dynamic range is over 65 dB. The detectable field strength is comparable with a resonant microwave-dressed Rydberg heterodyne receiver using the same system, which is 0.96 μV/cm with sensitivity of 304 nV cm–1 Hz−1/2. We also show the system has an inherent polarization selectivity feature. Our method can provide high sensitivity of electric field measurement and be extended to arbitrary frequency measurements. [ABSTRACT FROM AUTHOR]

We characterized the electric field distribution of GaN-on-GaN p–n diodes with partially compensated ion-implanted edge termination (ET) using an electric field induced second harmonic generation technique (EFISHG). The distributed electric field from the anode to the outer edge of the ET demonstrates the effectiveness of the ET structure. However, EFISHG also shows that its effectiveness is strongly dependent on the acceptor charge distribution in the ET's partially compensated layer (PC). A generally lower amount of acceptor charge can be inferred from the measured electric field distribution resulting from excessive ion implantation energy or dose during ET fabrication and causing lower than optimal breakdown voltage. Localized field crowding can be observed when the remaining acceptors uncompensated by the implant in the PC layer are nonuniformly distributed around the periphery of the devices. Important information can be obtained from these direct electric field measurements and used for optimizing the device design and fabrication process. [ABSTRACT FROM AUTHOR]

Ta-doped HfO2 thin films grown on Pt/Ti/SiO2/Si by reactive sputtering possess strong ferroelectric properties, as detected by corresponding polarization vs electric field measurement and mesoscopic piezoresponse force microscopy. Capacitance/current-electric field curves are used to reveal the substances with ferroelectric properties in the thin films. The ferroelectricity of Ta-doped HfO2 is influenced by Ta contents. The remanent polarization Pr can reach ∼53 μC/cm2 by optimizing the Ta percentage. X-ray diffraction and Raman scattering analyses indicate only the presence of monoclinic phase peaks in undoped HfO2 thin films, while Ta doping promotes the formation of the ferroelectric phase (orthorhombic Pca21). X-ray photoelectron spectroscopy demonstrates that the incorporation of Ta5+ within the HfO2 lattice boosts the ferroelectric properties. A polydomain structure is observed on the bare surface of 16% Ta-doped HfO2. Moreover, the switching behavior of the domain is explored by applying an external voltage, demonstrating the potential for storage device applications. [ABSTRACT FROM AUTHOR]