1. Diffusion of Pt in molecular beam epitaxy grown ZnSe.
- Author
-
Slotte, J., Salonen, R., Ahlgren, T., Ra¨isa¨nen, J., Rauhala, E., and Uusimaa, P.
- Subjects
- *
PLATINUM compounds , *MOLECULAR beam epitaxy , *ARRHENIUS equation - Abstract
Diffusion of platinum in zinc selenide has been studied by the use of the [sup 4]He and [sup 12]C ion backscattering techniques. The samples were thin films grown by molecular beam epitaxy on GaAs (100) epitaxial layers followed by evaporation of platinum and annealing in the temperature range 500–800 °C. The diffusion coefficients were determined by the fitting of a concentration independent solution of the diffusion equation to the experimental depth profiles. The activation energy and the pre-exponential factor of the diffusion process were found to be 1.7 eV and 6.4×10[sup -6] cm[sup 2]/s, respectively. © 1998 American Institute of Physics. [ABSTRACT FROM AUTHOR]
- Published
- 1998
- Full Text
- View/download PDF