1. High performance Ge/MoS2 heterojunction photodetector with a short active region.
- Author
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Li, Liufan, Wen, Xiaokun, Lei, Wenyu, Di, Boyuan, Zhang, Yuhui, Zeng, Jinghao, Zhang, Youwei, Chang, Haixin, Zhou, Longzao, and Zhang, Wenfeng
- Abstract
We present a Ge/MoS
2 van der Waals heterojunction photodetector with a short active region constructed using a transfer process. The device exhibits broadband, self-powered, superior device performance within the visible to infrared wavelength (500–1700 nm) operated in a photovoltaic mode. Intriguingly, a sharp increased gain of 10 556 (93) with a varied breakdown voltage of −8.02 V (−6.25 V) under the 700 nm (1550 nm) laser illumination was observed, which was interpreted as the synergistic effect of both soft and avalanche breakdown behavior. These results imply disposable high-sensitivity broadband light-detection potentials with a simple Ge/MoS2 heterojunction, exempting it from the complex and strict construction requirement of conventional avalanche photodetectors. [ABSTRACT FROM AUTHOR]- Published
- 2024
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