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In this work, NaTaO3 ceramics are prepared by conventional mixed oxide method and NaTaO3 films are deposited by RF magnetron sputtering on Si/SiO2/TiO2/Pt substrates. The dielectric response of the obtained NaTaO3 ceramics and films is analyzed as a function of frequency and temperature. Between 1 kHz and 1 MHz, the dielectric permittivity of NaTaO3 ceramics is frequency independent and increases on cooling up to ∼324, which is the highest value ever reported for NaTaO3 ceramics. In contrast, NaTaO3 films exhibit a dielectric relaxation between ∼20 and 30 K, following the Arrhenius law with activation energy ∼51 meV and pre-exponential term ∼10-15 s and attributed to polaron hopping. [ABSTRACT FROM AUTHOR]

The effect of Sr vacancies on the behavior of strontium titanate with trivalent dopants (La3+, Gd3+, and Y3+) substituting Sr2+ ions is reported. A remarkable shift of the antiferrodistortive transition temperature Ta is revealed by Raman spectroscopy for just a small content of dopant. It is shown that a unique linear dependence of Ta versus tolerance factor is obtained when Sr-vacancies are taken into account. A vacancy size value of ∼1.54 Å is estimated, which is ∼7% larger than Sr2+ radius. This size difference enables explaining the unexpected increase of lattice parameter with increasing Bi3+ content in Sr1-1.5xBixTiO3. [ABSTRACT FROM AUTHOR]