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Time-varying metasurfaces offer an efficient means of controlling nonlinear harmonics by manipulating component geometries and modulating signals. This ability renders them valuable across various fields, such as wireless communication, radar sensing, and biological monitoring. However, most of the energy in time-varying metasurfaces is concentrated in the fundamental wave, as well as scattered at various harmonic orders, which reduces the energy efficiency at the desired harmonic. Existing approaches have employed time-varying coding digital metasurfaces to achieve efficient harmonic conversion but are primarily designed for reflection. Reflection-based designs require a feed source to excite the metasurface, which can cause certain shielding effects and limit their application in specific scenarios. Thus, designing transmissive time-varying coding digital metasurfaces for efficient harmonic conversion is currently an urgent problem that needs to be addressed. To solve this problem, this paper develops a time-varying coding digital double-layered Huygens' metasurface, which achieves efficient conversion of the desired transmitted harmonics. The unit structure of the metasurface consists of a pair of reverse-symmetric split rings located on the upper and lower sides of a dielectric substrate, enabling nearly non-reflective Huygens' resonance. Based on a continuous periodic phase modulation strategy, we achieved efficient conversion of transmitted harmonics by loading a time-varying voltage (phase) modulation signal with a 5-bit resolution bit width onto the designed double-layered Huygens' metasurface. This study presents a solution for designing a transmissive time-varying coding digital metasurface to achieve efficient conversion of harmonics, thereby enhancing the application capabilities of time-varying coding digital metasurfaces. [ABSTRACT FROM AUTHOR]

The logic gate is the basic unit of a digital circuit structure. The operation, memory, I/O, and other reading and writing functions of computer systems require logic circuits. Logic gates based on resistive memory can make existing integrated circuits denser, smaller, faster, and use fewer devices. In this paper, Al/polymethyl methacrylate (PMMA)/egg albumen (EA):Au nanoparticles/PMMA/Al multilayer biological resistive random access memory was prepared based on the natural biological material—egg albumen (EA). The device has bipolar switching behavior, a higher switching current ratio, a lower threshold voltage, and better stability. A circuit based on auxiliary logic is constructed using this device, and the logic functions of AND, OR, NOT, NAND, and NOR are realized. This device provides an effective potential solution for implementing high-performance electronic devices and large-scale integrated circuits. [ABSTRACT FROM AUTHOR]

In this work, undoped semiconductors, germanium (Ge) and germanium tin (GeSn), were grown on ferrimagnetic insulator yttrium iron garnet (YIG) thin films using ultra-high vacuum molecular beam epitaxy. The crystallinity of the structure was determined from x-ray diffraction and high-resolution transmission electron microscopy combined with energy dispersive x-ray spectroscopy. Both spin pumping and inverse spin Hall effects (ISHEs) of YIG/Ge and YIG/GeSn heterojunctions have been investigated with the help of broadband ferromagnetic resonance (FMR). We observe that the spin mixing conductances of YIG/Ge (60 nm) and YIG/GeSn (60 nm) are 5.4 × 1018 m−2 and 7.2 × 1018 m−2, respectively, responsible for giant spin current injection. Furthermore, it is found that spin pumping injects giant spin current from ferrimagnetic YIG into the Ge semiconductor. The infrared laser modulated ISHE was examined using heavy metal platinum as a spin current collector. Also, it has been noted that the variation in the power of laser irradiation significantly changed the ISHE voltage of YIG/Ge/Pt spin junctions, saturated magnetization, FMR linewidth, and Gilbert damping parameter of YIG, which could be attributed to the laser-induced thermal effect. The outcomes from this study are promising for the development of Ge-based spintronic and magnonic devices. [ABSTRACT FROM AUTHOR]