1. A thorough study on the electrical performance change and trap evolution of AlGaN/GaN MIS-HEMTs under proton irradiation.
- Author
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Zhu, Tian, Zheng, Xue-Feng, Yin, Tai-Xu, Zhang, Hao, Wang, Xiao-Hu, Yue, Shao-Zhong, Wang, Tan, Han, Tao, Ma, Xiao-Hua, and Hao, Yue
- Subjects
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BREAKDOWN voltage , *GALLIUM nitride , *IRRADIATION , *SEMICONDUCTOR junctions , *ELECTRON density , *ELECTRON traps , *CHARGE carrier mobility - Abstract
In this work, the effects of proton-induced trap evolution on the electrical performances of AlGaN/GaN metal–insulator–semiconductor (MIS) high-electron-mobility-transistors (HEMTs) have been investigated in detail. Contrary to observed proton-induced degradation in sheet electron density (ns), carrier mobility (μn), and sheet resistance (RSH), a significant improvement in gate leakage current (IG) and off-state drain–source breakdown voltage (BVDS) is found in irradiated devices. The low-frequency noise (LFN) results show that the density of traps in the AlGaN layer and AlGaN/GaN interface increases after irradiation, which leads to a degradation in ns, μn, and RSH and an improvement in BVDS due to enhanced electron trapping and depletion. Furthermore, the measurement results obtained from the frequency-dependent conductance technique show that irradiated devices exhibit decreased trap density (DT) at the insulator/semiconductor interface with hardly changed trap energy level (ET), which confirms the observed proton-induced decrease in IG. An increase in DT at the AlGaN/GaN interface is also found after irradiation, which is consistent with LFN results. These traps with deeper ET induce a serious Coulomb scattering effect. This work provides valuable information for the systematic understanding of the proton irradiation effect of AlGaN/GaN MIS-HEMTs. [ABSTRACT FROM AUTHOR]
- Published
- 2023
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