1. Thickness-dependent carrier polarity of MoTe2 transistors with NiTe2 semimetal contacts.
- Author
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Di, Boyuan, Wen, Xiaokun, Lei, Wenyu, Zhang, Yuhui, Li, Liufan, Xu, Xinyue, Kong, Wenchao, Chang, Haixin, and Zhang, Wenfeng
- Subjects
TRANSISTORS ,CHARGE transfer ,ORGANIC field-effect transistors - Abstract
We demonstrated that the carrier polarity of MoTe
2 transistors can be modulated by controlling the channel thickness with NiTe2 semimetal contacts. The multilayer MoTe2 transistors (thickness >7.1 nm) exhibit a symmetric ambipolar conduction, and a transition to unipolar p-type polarity occurs as the channel thickness decreased down to ∼2.3 nm. The position of the semimetal NiTe2 work function was verified to be located at the mid-gap of multilayer MoTe2 , and the observed transition was interpreted by a synergistic effect of the channel thickness-dependent band alignment and charge transfer behavior with unique NiTe2 semimetal contacts. [ABSTRACT FROM AUTHOR]- Published
- 2023
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