Search

We report a compact, scalable, quantum photonic integrated circuit realised by combining multiple, tuneable InGaAs/GaAs quantum dot single photon sources with a silicon oxynitride waveguide circuit. Each waveguide in the circuit is addressed by a separate, electrically controlled quantum dot-containing diode. We show that the quantum dot emission from neighbouring diodes can be independently tuned to degeneracy using the Stark Effect and that the resulting photon streams are indistinguishable. This enables on-chip Hong-Ou-Mandel-type interference, as required for many photonic quantum information processing schemes. [ABSTRACT FROM AUTHOR]

Quantum dot resonant tunneling diode single photon detector with independently defined absorption and sensing areas is demonstrated. The device, in which the tunneling is constricted to an aperture in an insulating layer in the emitter, shows electrical characteristics typical of high quality resonant tunneling diodes. A single photon detection efficiency of 2.1%±0.1% at 685 nm was measured corresponding to an internal quantum efficiency of 14%. The devices are simple to fabricate, robust, and show promise for large absorption area single photon detectors based on quantum dot structures. [ABSTRACT FROM AUTHOR]

The authors have developed a microcavity single-photon source based on a single quantum dot within a planar cavity in which wet oxidation of a high-aluminium content layer provides lateral confinement of both the photonic mode and the injection current. Lateral confinement of the optical mode in optically pumped structures produces a strong enhancement of the radiative decay rate. Using microcavity structures with doped contact layers, they demonstrate a single-photon emitting diode where current may be injected into a single dot. [ABSTRACT FROM AUTHOR]