Search

Decay processes of artificial two-domain structures with various distances in LiNbO3 crystals were carefully investigated using scanning probe microscope. The decay behavior of the composite domains is found closely related to the set domain distance. Detailed analysis indicates that the tip field mostly affects the lateral domain wall motion of the domains in two-domain structures, while the repulsive force of bound charges mainly influences vertical domain wall motion. Thin sample thickness and large domain distance are inferred beneficial for manufacturing small scaled stable domain structures. [ABSTRACT FROM AUTHOR]

The LiNbO3 crystals were polarized at fixed points and characterized by means of scanning probe microscope. The growth evolution and the decay process of the fabricated domains were carefully studied. Two critical radii rC and Rc that determine a different decay behavior of domains were put forward, where rC is considered to correspond to the point when the domains just penetrate the crystal. Those domains with radius larger than rC could exist beyond 5 days, those between rC and Rc experienced a distinct metastable state before completely disappearing, while those smaller than Rc were even invisible under piezoresponse force mode. [ABSTRACT FROM AUTHOR]

The LiNbO3 crystal was polarized and characterized by the piezoresponse force mode of scanning probe microscope. By using the Kolmogorov-Avrami-Ishibashi [Izv. Akad. Nauk, USSR: Ser. Math. 3, 355 (1937); J. Chem. Phys. 8, 212 (1940); J. Phys. Soc. Jpn. 63, 1031 (1994); 63, 1601 (1994)] theory to analyze the relaxation process after domain switching, it was found that (1) the percent of final switched domains after poling increased with the enhancing poling voltage, (2) the nucleation time was a constant to a certain sample, (3) the dimension of domain growth decreased with the enhancing poling voltage, and (4) the relaxation time had a maximum at a medial voltage. The corresponding mechanism for domain switching was discussed, which is hopefully useful for domain engineering. [ABSTRACT FROM AUTHOR]