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Performance improvement of InGaAs buried channel metal-oxide-semiconductor field-effect-transistors (MOSFETs) has been achieved by inserting InAs layer and properly designing the inserted layer position. In0.7Ga0.3As and InAs channel buried channel MOSFETs were fabricated and analyzed including drive current, transconductance, effective mobility, and subthreshold swing. All InAs buried channel devices show good off-state and saturation property. By inserting InAs in the middle of InGaAs channel (InGaAs/InAs/InGaAs channel), 37% enhancement of high field effective channel mobility was achieved over devices with pure InGaAs channel. Devices with InAs inserted in the middle exhibits peak effective channel mobility around 6140 cm2/V s and subthreshold swing of 107 mV/dec. [ABSTRACT FROM AUTHOR]

In this work, the experimental impact of SF6 plasma treatment on the performance of InP metal-oxide-semiconductor field-effect transistors is presented. S and F are incorporated into atomic layer deposited HfO2 via postgate SF6 plasma treatment. The decreased subthreshold swing, gate leakage (Ig), and increased effective channel mobility (μeff) indicate that better interface and bulk oxide quality have been achieved with SF6 plasma treatment due to the formation of stronger Hf-F bonds. Drive current (Id), transconductance (Gm), and effective channel mobility (μeff) are improved by 22.3%, 35%, and 35%, respectively, compared with those of control devices. [ABSTRACT FROM AUTHOR]