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We demonstrate here an In2S3 based vacuum pressure sensor that can operate over a vacuum range, 103–10−3 mbar at room temperature. It is shown that vacuum pressure has a significant electrical impact on the sensitivity and the sensor response of the device. The sensor response of the device in terms of the rate of resistance change is 183 with a quick rise/fall time of 3.3/1.7 s. Even after being exposed to ambient conditions for 8 weeks, the device displays a consistent and periodic sensor response for 100 consecutive vacuum on/off cycles, demonstrating its durability. X-ray photoelectron spectroscopy was used to identify the surface adsorbed/chemisorbed groups, which are responsible for vacuum sensing properties. These surface effects were further confirmed by exposing the device to different environments such as humidity, high temperature, and high purity oxygen. Though In2S3 is known for its properties as a buffer layer in solar cells, this study reveals another potential application of In2S3 thin films as a vacuum pressure sensor. [ABSTRACT FROM AUTHOR]

Vanadium dioxide (VO2) thin films grown on hexagonal boron nitride (hBN) flakes show three orders of magnitude resistance change due to metal–insulator transition (MIT). The MIT property of VO2 thin films is strongly dependent on the metallic domain size, which should be identified to derive the resistance change owing to the single metallic domain. In this study, we investigated the relationship between the metallic domain size and the device-size-dependent MIT property of VO2 thin films grown on hBN. We observed by temperature-dependent Raman spectroscopy and optical microscopy the emergence of the metallic domains and determined the metallic domain size in VO2 thin films grown on hBN. The metallic domain size of the VO2 thin films grown on hBN was determined to be ∼500 nm on average in length and up to sub-micrometer scale. Electric transport measurements revealed that VO2/hBN microwires exhibit multi-level step-like resistivity changes that change by one to two orders when the length and width are ∼2 μm owing to the confined metallic domains in the micrometer scale. Our results open a way for VO2 devices, showing a steep and large resistance change even in the micrometer scale. [ABSTRACT FROM AUTHOR]

We obtain a large in-plane magnetic uniaxial anisotropy in the soft magnetic Fe60Co20B20 (FeCoB) thin films prepared by rotational sputtering. The anisotropy field (Ha) of 75 to 175 Oe was found in the films with wide ranged thickness from 2.5 to 100 nm, which was attributed to the magnetoelastic energy in association with anisotropic tensile stress. This stress-induced anisotropy has outstanding thermal stability that survives up to 350 °C in the annealing process. The similar large uniaxial anisotropy can be realized in other soft magnetic thin films, such as Fe, Co, Ni, FeCo, and NiFe, with the same synthesis technique. The anisotropic FeCoB film was used as a free layer in a synthetic spin valve. A linear resistance change against external field with a range wider than ±100 Oe together with a significantly reduced coercivity of ∼1.1 Oe (∼8.5 Oe in the case with isotropic free layer) was observed in the transfer curve. The results of this work not only confirm the feasibility of films with large stress-induced magnetic anisotropy as a functional layer in spin-valve devices but also demonstrate a simple synthesis route to induce the magnetic anisotropy, which provides an additional control parameter for the spintronic device design. [ABSTRACT FROM AUTHOR]

Relaxation in resistance switching (RS) has severely hindered the stability of memory devices based on oxide-thin-film/ferroelectric heterostructures. In this work, Zn doped SnO2 (ZTO) thin films were deposited on (111)-0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-0.3PT) substrates to investigate the effect of oxygen vacancies (OVs) on resistance relaxation. The polarization-dependent resistance relaxation is observed in ZTO/PMN-0.3PT heterostructures. The largest relative change in resistance up to 53.6% within 20 min is ascribed to OV diffusion. Local aggregation of positively charged OVs with the application of poling electric field would enhance the Coulomb repulsion and strain in distorted lattice, which could accelerate the OV back-diffusion. Partial positively charged OVs are neutralized in the positive polarization state with the application of +10 kV/cm poling voltage, which weakens the relaxation compared to the negative polarization state. Our work helps to understand the interrelation between OVs and polarization-dependent relaxation of RS properties. [ABSTRACT FROM AUTHOR]