Search

We report on the observation of remarkable room-temperature ferromagnetism in nanocrystalline epitaxial Co:TiO2 films grown on sapphire (0001) substrates by a pulsed-laser deposition technique using high-density targets. The films were characterized by x-ray measurements, atomic force microscopy, micro-Raman, electron-paramagnetic resonance, and magnetization studies. The films exhibit three-dimensional islandlike growth that contains nanocrystalline particles. Our experimental results suggest that the remarkable ferromagnetism in Co:TiO2 films is controlled either by the interstitial Co2+ ions or small clusters, which are mainly present at the interface and on the surface of the films. Our work clearly indicates that Co interstitials and nanoclusters cause room-temperature ferromagnetism in Co-doped TiO2. [ABSTRACT FROM AUTHOR]

We report on the observation of remarkable room-temperature ferromagnetism in epitaxial (Zn,Mn)O films grown by a pulsed-laser deposition technique using high-density targets. The optimum growth conditions were demonstrated from x-ray measurements, microstructure, Rutherford backscattering, micro-Raman, and magnetic studies. Superior ferromagnetic properties were observed in (Zn,Mn)O films grown at a substrate temperature of 500 °C and with an oxygen partial pressure of 1 mTorr. Ferromagnetism becomes weaker with increasing substrate temperature due to the formation of isolated Mn clusters irrespective of higher crystalline quality of the film. [ABSTRACT FROM AUTHOR]

We report transport, magnetization, and transmission-electron-microscopic studies of La[sub 1-x]Ba[sub x]MnO[sub 3]/SrTiO[sub 3] thin films grown by pulsed-laser deposition. The metal–insulator transition is remarkably sharp, and the high value of the temperature coefficient of resistivity is significantly relevant for the required value for the infrared imaging applications. We have demonstrated that the strain-induced property can be tuned and stabilized in La[sub 1-x]Ba[sub x]MnO[sub 3] films simply by changing the doping level (La/Ba ratio) and addition of metal ions (Ag) for applications at desirable temperature regime close to room temperature. © 2002 American Institute of Physics. [ABSTRACT FROM AUTHOR]

We have demonstrated the fabrication of highly continuous and smooth CdSe semiconductor films containing self-assembled nanocrystals (NCs) using a simple, low cost solution-processed deposition technique. The impact of thermal annealing and ethanedithiol (EDT) treatment on oleate capped CdSe NCs films is illustrated. Post deposition EDT treatment enhances strong electron coupling between NCs by reducing the inter-particle distance, which enhances four orders of magnitude of photocurrent in the pn-device. Mild thermal annealing of NC films cause large redshift and significant broadening. Our findings suggest that NCs with short-range organic ligands are suitable for high-performance Thin-Film-Transistors and next generation high-efficiency photovoltaics. [ABSTRACT FROM AUTHOR]

We report the synthesis of epitaxial As-doped ZnO and Mn-doped (ZnAs)O films by pulsed-laser deposition technique. The grain size in (ZnAs)O films decreases from 40 to less than 10 nm upon Mn doping, illustrating that Mn acts as a potential catalyst to create nanosize grains. Temperature dependent electrical resistance shows metal-insulator transition and metal-semiconductor transition (MST) at 165 and 115 K, respectively, in (ZnAs)O, although Mn doping suppresses MST completely. Both ionization efficiency on oxygen vacancies and percolation of charge carriers may be responsible for such transitions. In addition, electrical conduction in these films shows strong aging effects. [ABSTRACT FROM AUTHOR]