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Your search keyword '"AND KOHN E."' showing total 9 results
Start Over Author "AND KOHN E." Journal applied physics letters
9 results on '"AND KOHN E."'

1. Demonstration of near-ideal Schottky contacts to Si-doped AlN

Author

Quiñones, C. E., primary, Khachariya, D., additional, Bagheri, P., additional, Reddy, P., additional, Mita, S., additional, Kirste, R., additional, Rathkanthiwar, S., additional, Tweedie, J., additional, Pavlidis, S., additional, Kohn, E., additional, Collazo, R., additional, and Sitar, Z., additional

Published
2023
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9. High hole mobility in Si[sub 0.17]Ge[sub 0.83] channel metal-oxide-semiconductor field-effect transistors grown by plasma-enhanced chemical vapor deposition.

Author

Ho¨ck, G., Kohn, E., Rosenblad, C., von Ka¨nel, H., Herzog, H.-J., and Ko¨nig, U.

Subjects
*CHEMICAL vapor deposition, *METAL oxide semiconductor field-effect transistors
Abstract

We report on effective hole mobility in SiGe-based metal-oxide-semiconductor (MOS) field-effect transistors grown by low-energy plasma-enhanced chemical vapor deposition. The heterostructure layer stack consists of a strained Si[sub 0.17]Ge[sub 0.83] alloy channel on a thick compositionally-graded Si[sub 0.52]Ge[sub 0.48] buffer. Structural assessment was done by high resolution x-ray diffraction. Maximum effective hole mobilities of 760 and 4400 cm2/Vs have been measured at 300 and 77 K, respectively. These values exceed the hole mobility in a conventional Si p-MOS device by a factor of 4 and reach the mobility data of conventional Si n-MOS transistors. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Published
2000

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