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We present compelling experimental results of the optical characteristics of transparent oxide CuGaO2 and related CuGa1-xFexO2 (with 0.00≤x≤0.05) alloys, whereby the forbidden electronic transitions for CuGaO2 become permissible in the presence of B-site (Ga sites) alloying with Fe. Our computational structural results imply a correlation between the global strain on the system and a decreased optical absorption edge. However, herein, we show that the relatively ordered CuGa1-xFexO2 (for 0.00≤x≤0.04) structures exhibit much weaker vis-absorption compared to the relatively disordered CuGa0.95Fe0.05O2.

We have used femtosecond pump-probe spectroscopy to study the ultrafast nonlinear response of AlGaAs two-dimensional photonic crystal waveguides in the near-infrared spectral region. The modulation of the reflectivity spectra due to the refractive index change produced by photogenerated carriers was measured. We observed an instantaneous pump-induced shift in the wavelength of a photonic resonance at 882 nm with a fast decay time of ≈8 ps. The magnitude of the reflectivity change was very large at wavelengths close to the photonic resonance, with a maximum value of ΔR/R>30% at 877 nm. These results confirm the excellent potential of photonic crystal waveguides in ultrafast nonlinear switching applications.

The degenerate two-photon absorption coefficient β and Kerr nonlinearity n2 are measured for bulk Si at 300K using 200fs pulses with carrier wavelength of 850

The authors demonstrate an on-chip optical delay in AlxGa1−xAs that operates at room temperature and 1.55μm. A nonlinear directional coupler for optical switching and a 188ps long racetrack structure provide bit delays of >100 for picosecond pulses. In the linear regime the transmission ratio of the slow channel is 74%, which reduces to 40% with increasing peak intensity. (Meanwhile, the fast channel output increases from 26% to 60%.) Switching occurs due to a nonlinear detuning of the directional coupler, limited by three-photon absorption and time-averaging effects. This proof-of-principle device can operate at up to 5GHz and is promising for optical buffering applications.