18 results on '"Anderson, Travis J."'
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2. Assessment of channel temperature in β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors using visible wavelength thermoreflectance thermal imaging
3. Reduced temperature in lateral (AlxGa1−x)2O3/Ga2O3 heterojunction field effect transistor capped with nanocrystalline diamond.
4. Experimental determination of critical thickness limitations of (010)β -(AlxGa1−x)2O3 heteroepitaxial films
5. Assessment of channel temperature in β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors using visible wavelength thermoreflectance thermal imaging.
6. Microstructural evolution of extended defects in 25μ m thick GaN homo-epitaxial layers
7. Experimental determination of critical thickness limitations of (010) β-(AlxGa1−x)2O3 heteroepitaxial films.
8. Microstructural evolution of extended defects in 25 μm thick GaN homo-epitaxial layers.
9. Activation of implanted Si, Ge, and Sn donors in high-resistivity halide vapor phase epitaxial β-Ga2O3:N with high mobility
10. Activation of implanted Si, Ge, and Sn donors in high-resistivity halide vapor phase epitaxial β-Ga2O3:N with high mobility.
11. High resistivity halide vapor phase homoepitaxial β-Ga2O3 films co-doped by silicon and nitrogen
12. Electrical characterization of ALD HfO2 high-k dielectrics on ( 2¯01) β-Ga2O3
13. High resistivity halide vapor phase homoepitaxial β-Ga2O3 films co-doped by silicon and nitrogen.
14. Electrical characterization of ALD HfO2 high-k dielectrics on (201) β-Ga2O3.
15. Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs
16. On the high curvature coefficient rectifying behavior of nanocrystalline diamond heterojunctions to 4H-SiC
17. Degradation mechanisms of 2MeV proton irradiated AlGaN/GaN HEMTs.
18. Electrical characterization of ALD HfO2 high-k dielectrics on (201) β-Ga2O3.
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