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This paper reports on the charge carrier properties of several lithium indium diselenide (LISe) semiconductors. It was found that the charge collection efficiency of LISe was improved after high flux thermal neutron irradiation including the presence of a typically unobservable alpha peak from hole-only collection. Charge carrier trap energies of the irradiated sample were measured using photo-induced current transient spectroscopy. Compared to previous studies of this material, no significant differences in trap energies were observed. Through trap-filled limited voltage measurements, neutron irradiation was found to increase the density of trap states within the bulk of the semiconductor, which created a polarization effect under alpha exposure but not neutron exposure. Further, the charge collection efficiency of the irradiated sample was higher (14–15 fC) than that of alpha particles (3–5 fC), indicating that an increase in hole signal contribution resulted from the neutron irradiation. Finally, it was observed that significant charge loss takes place near the point of generation, producing a significant scintillation response and artificially inflating the W-value of all semiconducting LISe crystals.This paper reports on the charge carrier properties of several lithium indium diselenide (LISe) semiconductors. It was found that the charge collection efficiency of LISe was improved after high flux thermal neutron irradiation including the presence of a typically unobservable alpha peak from hole-only collection. Charge carrier trap energies of the irradiated sample were measured using photo-induced current transient spectroscopy. Compared to previous studies of this material, no significant differences in trap energies were observed. Through trap-filled limited voltage measurements, neutron irradiation was found to increase the density of trap states within the bulk of the semiconductor, which created a polarization effect under alpha exposure but not neutron exposure. Further, the charge collection efficiency of the irradiated sample was higher (14–15 fC) than that of alpha particles (3–5 fC), indicating that an increase in hole signal contribution resulted from the neutron irradiation. Finally, it wa...

We report on the scintillation properties of Cs2HfCl6 (cesium hafnium chloride or CHC) as an example of a little-known class of non-hygroscopic compounds having the generic cubic crystal structure of K2PtCl6. The crystals are easily growable from the melt using the Bridgman method with minimal precursor treatments or purification. CHC scintillation is centered at 400 nm, with a principal decay time of 4.37 μs and a light yield of up to 54 000 photons/MeV when measured using a silicon CCD photodetector. The light yield is the highest ever reported for an undoped crystal, and CHC also exhibits excellent light yield nonproportionality. These desirable properties allowed us to build and test CHC gamma-ray spectrometers providing energy resolution of 3.3% at 662 keV.

Charge-carrier mobilities were measured for the first time in Cd(0.8)Zn(0.2)Te single crystals using time-of-flight measurements of charge carriers produced by short (10 ns) light pulses from a frequency-doubled Nd:YAG laser (532 nm). The electron mobility displayed a T exp -1.1 dependence on the absolute temperature T in the range 200-320 K, with a room-temperature mobility of 1350 sq cm/V s. The hole mobility displayed a T exp -2.0 dependence in the same temperature range, with a room-temperature mobility of 120 sq cm/V s. Cd(0.8)Zn(0.2)Te appears to be a very favorable material for a room-temperature electronic nuclear radiation detector.

The effect of tellurium precipitates was studied in medium resistivity (10 exp 3-10 exp 6 ohm cm) undoped and Cl-doped CdTe using differential scanning calorimetry (DSC) and mid-infrared spectroscopy and the results were correlated with near-infrared microscopy photographs. When present in a significant quantity (about 0.25 wt pct), we show that Te precipitates are detectable using DSC measurements. In the mid-infrared, the contribution of the absorption by free-carriers is negligible, and therefore, the effect of the Te precipitates in these crystals can be considered uncoupled from the effects of Cd vacancies.

6LiInSe2 is a promising thermal neutron semiconductor detector material. The performance of the detector is affected by the carrier mobility-lifetime products. Therefore, defects that function as carrier recombination centers need to be identified. In this letter, characterization of defect levels in 6LiInSe2 by photo-induced current transient spectroscopy (PICTS) and photoluminescence is reported. PICTS measurements revealed electron-related defects located at 0.22, 0.36, and 0.55 eV and hole-related defects at 0.19, 0.30, and 0.73 eV. Free exciton and donor-acceptor pairs (DAP) emissions were observed. The PICTS defect level values are consistent with those extracted from DAP transitions.

Single crystals of semiconductor-grade lithium indium selenide (LiInSe2) were grown using the vertical Bridgman method. The orthorhombic structure of the materials was verified using powder x-ray diffraction. The room temperature band gap of the crystal was found to be 2.85 eV using optical absorption measurements. Resistivity of LiInSe2, obtained using current-voltage measurements, has semiconducting nature (decreases with increasing temperature) and is in order of 1010 Ω·cm. Photoconductivity measurement showed the photocurrent peak at 445 nm. Nuclear radiation devices were fabricated, and alpha particle detection was observed, suggesting that this material could be a candidate for neutron detection applications.

Europium-doped strontium and barium iodide are found to be readily growable by the Bridgman method and to produce high scintillation light yields.

We report on the significant enhancement of photocurrent in pn heterojunction diode, consisting of n-CdSe∕p-Si substrates, in situ deposited with Au nanoparticles on the surface by the pulsed-laser deposition technique. This is attributed due to the large enhancement in electromagnetic field that occurs in the vicinity of the metal surface, causing surface plasmons. The large enhancement in Raman and photoluminescence intensity was observed due to surface plasmon resonance. Our results suggest that the photodetectors, optoelectronic, such as high-performance thin-film solar cells, optical communication, and sensing devices, including bio- and molecular sensors, can be fabricated with improved functionality.

We report on the observation of remarkable room-temperature ferromagnetism in nanocrystalline epitaxial Co:TiO2 films grown on sapphire (0001) substrates by a pulsed-laser deposition technique using high-density targets. The films were characterized by x-ray measurements, atomic force microscopy, micro-Raman, electron-paramagnetic resonance, and magnetization studies. The films exhibit three-dimensional islandlike growth that contains nanocrystalline particles. Our experimental results suggest that the remarkable ferromagnetism in Co:TiO2 films is controlled either by the interstitial Co2+ ions or small clusters, which are mainly present at the interface and on the surface of the films. Our work clearly indicates that Co interstitials and nanoclusters cause room-temperature ferromagnetism in Co-doped TiO2.

Crystals of potassium lead bromide (KPB), a moisture-insensitive low-energy phonon laser host, were synthesized and purified. High-quality undoped and Tb3+-doped (nominal doping concentration was 5mol% TbBr3) KPb2Br5 were grown by the vertical Bridgman technique. X-ray diffraction measurements indicated that, at room temperature, the material was monoclinic with space group P21∕c, while at a high temperature the phase transformed to orthorhombic form. A reversible phase transition was observed around 256°C upon the heating and cooling cycle from differential scanning calorimetric measurements. The material was found to be transparent in the broad range from ∼0.4μmto25μm and above. The transmission spectrum of a Tb3+-doped crystal showed different absorption bands of Tb3+ at 4.5μm, 3μm, 2.3μm, and 2μm corresponding to F67–Fα7 transitions, for α=2–5. The maximum phonon energy of undoped KPb2Br5 at room temperature was determined to be 134cm−1 from Raman scattering spectrum.