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Your search keyword '"Atulasimha, Jayasimha"' showing total 13 results
Start Over Author "Atulasimha, Jayasimha" Journal applied physics letters
13 results on '"Atulasimha, Jayasimha"'

11. Giant voltage manipulation of MgO-based magnetic tunnel junctions via localized anisotropic strain: A potential pathway to ultra-energy-efficient memory technology.

Author

Zhengyang Zhao, Jamali, Mahdi, D'Souza, Noel, Delin Zhang, Bandyopadhyay, Supriyo, Atulasimha, Jayasimha, and Jian-Ping Wang

Subjects
VOLTAGE control, MAGNETIC tunnel junction devices, MAGNETIZATION, MAGNETOSTRICTIVE devices, PIEZOELECTRIC devices, MAGNESIUM oxide
Abstract

Voltage control of magnetization via strain in piezoelectric/magnetostrictive systems is a promising mechanism to implement energy-efficient straintronic memory devices. Here, we demonstrate giant voltage manipulation of MgO magnetic tunnel junctions (MTJ) on a Pb(Mg1/3Nb2/3)0.7Ti0.3O3 piezoelectric substrate with (001) orientation. It is found that the magnetic easy axis, switching field, and the tunnel magnetoresistance (TMR) of the MTJ can be efficiently controlled by strain from the underlying piezoelectric layer upon the application of a gate voltage. Repeatable voltage controlled MTJ toggling between high/low-resistance states is demonstrated. More importantly, instead of relying on the intrinsic anisotropy of the piezoelectric substrate to generate the required strain, we utilize anisotropic strain produced using a local gating scheme, which is scalable and amenable to practical memory applications. Additionally, the adoption of crystalline MgO-based MTJ on piezoelectric layer lends itself to high TMR in the strain-mediated MRAM devices. [ABSTRACT FROM AUTHOR]

Published
2016
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