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Your search keyword '"Bender, Hugo"' showing total 6 results
Start Over Author "Bender, Hugo" Journal applied physics letters
6 results on '"Bender, Hugo"'

1. Electrical properties of extended defects in strain relaxed GeSn

Author

Gupta, Somya, primary, Simoen, Eddy, additional, Loo, Roger, additional, Shimura, Yosuke, additional, Porret, Clement, additional, Gencarelli, Federica, additional, Paredis, Kristof, additional, Bender, Hugo, additional, Lauwaert, Johan, additional, Vrielinck, Henk, additional, and Heyns, Marc, additional

Published
2018
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4. Hafnium oxide films by atomic layer deposition for high-κ gate dielectric applications: Analysis of the density of nanometer-thin films

Author

Puurunen, Riikka L., primary, Delabie, Annelies, additional, Van Elshocht, Sven, additional, Caymax, Matty, additional, Green, Martin L., additional, Brijs, Bert, additional, Richard, Olivier, additional, Bender, Hugo, additional, Conard, Thierry, additional, Hoflijk, Ilse, additional, Vandervorst, Wilfried, additional, Hellin, David, additional, Vanhaeren, Danielle, additional, Zhao, Chao, additional, De Gendt, Stefan, additional, and Heyns, Marc, additional

Published
2005
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6. Strain mapping of tensiley strained silicon transistors with embedded Si1-yCy source and drain by dark-field holography.

Author

Hüe, Florian, Hÿtch, Martin, Houdellier, Florent, Bender, Hugo, and Claverie, Alain

Subjects
HOLOGRAPHY, TRANSISTORS, SILICON, ELECTRON mobility, TRANSMISSION electron microscopy, FINITE element method
Abstract

Dark-field holography, a new transmission electron microscopy technique for mapping strain distributions at the nanoscale, is used to characterize strained-silicon n-type transistors with a channel width of 65 nm. The strain in the channel region, which enhances electron mobilities, is engineered by recessed Si0.99C0.01 source and drain stressors. The strain distribution is measured across an array of five transistors over a total area of 1.6 μm wide. The longitudinal tensile strain reaches a maximum of 0.58%±0.02% under the gate oxide. Theoretical strain maps obtained by finite element method agree well with the experimental results. [ABSTRACT FROM AUTHOR]

Published
2009
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