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A correction to the article "Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy" that was published in the previous issue is presented.

Hall effect and capacitance-voltage C(V) measurements were performed on p-type GaN:Mg layers grown on GaN templates by molecular beam epitaxy with a high range of Mg-doping concentrations. The free hole density and the effective dopant concentration NA-ND as a function of magnesium incorporation measured by secondary ion mass spectroscopy clearly reveal both a magnesium doping efficiency up to 90% and a strong dependence of the acceptor ionization energy Ea with the acceptor concentration NA. These experimental observations highlight an isolated acceptor binding energy of 245±25 meV compatible, at high acceptor concentration, with the achievement of p-type GaN:Mg layers with a hole concentration at room temperature close to 1019 cm-3. [ABSTRACT FROM AUTHOR]

We have investigated the optical properties of multi-stacked GaN/AlGaN self-assembled quantum dots (QDs) grown by molecular beam epitaxy. The QDs that emit visible light have a broad spectral range without incorporation of indium alloy because of the quantum-confined Stark effect. We found differences in the structural and optical properties between the layers of multi-stacked QDs. The carriers are more effectively transferred from the AlGaN barrier to the low energy side of the GaN QD emission than to the high energy side. We also observed long-lived carrier recombination dynamics for the visible range emission from QDs. [ABSTRACT FROM AUTHOR]