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Electron-hole recombination in CdTe quantum dots was studied by photoluminescence and resonant femtosecond pump–probe measurements. A dependence of recombination times with pump pulse intensity was observed and we attribute this to the Auger recombination process. The overall kinetic processes that we observed are a fast decay from the initial excited state to surface trap states, the Auger recombination, the recombination of electrons from the surface states, and a longer time recombination which we attribute to electrons in the deep traps states.

Femtosecond pump-probe studies at 1.5 μm of PbTe quantum dots in a glass matrix have revealed oscillations due to a spheroidal acoustic mode. The wavelength dependence of the observed frequencies indicates size selectivity. The frequency and damping of the mode as a function of wavelength agree with the predictions of an acoustic continuum model that suggests that the dominant damping mechanism is radiative loss from the dots to the surrounding glass.

This letter describes a principle demonstration of an ultrafast optical switch operating at 1Tbit∕s using CdTe-quantum-dots-doped glasses. Using a three-beam pump and probe experiment, we showed that thermal effects are responsible for a baseline in the pump and probe graphs and the nonexistence of carrier accumulation effects. After eliminating the thermal effects, we showed that, when two pump pulses are delayed by 1 ps, each pump pulse modulates the probe pulse independently, making this material highly promising for ultrafast all optical switching.

The efficiency, duration, and spectral content of the emission from laser‐produced Ta plasmas in the 10–71 nm spectral region have been measured for laser pulse durations ranging from 100 fs to 70 ps. Efficiencies from 0.3% for 100 fs pulses to 2.65% for 70 ps pulses, x‐ray pulse durations from less than 10 ps for 100 fs excitation pulses to 105 ps for 70 ps excitation pulses, and spectral content peaking in the 17–35 nm region were measured for 1 mJ pulses at intensities from 1011 to 5×1014 W/cm2.

We report the measurement of intervalley scattering rates for optically excited carriers in GaAs. The measurements were performed using optical pulses of 6 fs duration and an energy distribution centered at 2.0 eV. The average rates for Γ→X and Γ→L intervalley scattering were separately estimated by varying the sample temperature.

The first ’’self‐injected’’ unstable resonator laser is reported. 1‐ns, high peak power, single‐mode pulses are generated with neodymium‐yttrium aluminum garnet (Nd‐YAG) laser made with the same relevant optical components of the commercial DCR1 Quanta Ray oscillator.