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Start Over Author "Cao, X" Journal applied physics letters
43 results on '"Cao, X"'

33. Electrical effects of plasma damage in p-GaN

Author

Cao, X. A., primary, Pearton, S. J., additional, Zhang, A. P., additional, Dang, G. T., additional, Ren, F., additional, Shul, R. J., additional, Zhang, L., additional, Hickman, R., additional, and Van Hove, J. M., additional

Published
1999
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35. Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor

Author

Han, J., primary, Baca, A. G., additional, Shul, R. J., additional, Willison, C. G., additional, Zhang, L., additional, Ren, F., additional, Zhang, A. P., additional, Dang, G. T., additional, Donovan, S. M., additional, Cao, X. A., additional, Cho, H., additional, Jung, K. B., additional, Abernathy, C. R., additional, Pearton, S. J., additional, and Wilson, R. G., additional

Published
1999
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39. The polarity origin of the bipolar resistance switching behaviors in metal/La0.7Ca0.3MnO3/Pt junctions.

Author

Yang, R., Li, X. M., Yu, W. D., Gao, X. D., Shang, D. S., Liu, X. J., Cao, X., Wang, Q., and Chen, L. D.

Subjects
SWITCHING theory, METALLIC oxides, POLARITY (Physics), GIBBS' free energy, SCANNING Auger electron microscopy, OXIDATION-reduction reaction, ELECTRIC resistance
Abstract

Bipolar resistance switching behaviors in the M/La0.7Ca0.3MnO3/Pt (M=Pt, Ag, Cu, Al, Ti, and W) junctions were investigated. We found that the switching polarities of the junctions for M=Pt, Ag, and Cu were opposite to those for M=Al, Ti, and W. This phenomenon was attributed to the different Gibbs free energy of the metal oxide formation. Based on Auger electron spectroscopy measurement of the M/La0.7Ca0.3MnO3 interfaces, the switching mechanisms were further discussed in terms of metal electrode redox reaction for M=Al, Ti, and W and oxygen vacancy generation/annihilation in the La0.7Ca0.3MnO3 film for M=Pt, Ag, and Cu, respectively. [ABSTRACT FROM AUTHOR]

Published
2009
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40. Response to "Comment on 'Anomaly of Hall effect in magnetoresistive La[sub 0.67]Ca[sub 0.33]MnO[sub 3]' " [Appl. Phys. Lett. 76, 3653 (2000)].

Author

Cao, X. W., Cao, X.W., Fang, J., Wang, Z. H., Wang, Z.H., Li, K. B., and Li, K.B.

Subjects
*HALL effect, *MAGNETORESISTANCE, *MANGANITE
Abstract

Responds to comments on an article about anomaly of Hall effect in magnetoresistive La[sub 0.67]Ca[sub 0.33]MnO[sub 3] that appeared in a 2000 issues of 'Applied Physics Letters.' Intrinsic upper limit of Hall angle; Reversion of Hall sign in manganites; Asymmetric scattering mechanism.

Published
2000
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41. Al composition dependence of breakdown voltage in Al[sub x]Ga[sub 1-x]N Schottky rectifiers.

Author

Zhang, A. P., Zhang, A.P., Dang, G., Ren, F., Han, J., Polyakov, A. Y., Polyakov, A.Y., Smirnov, N. B., Smirnov, N.B., Govorkov, A. V., Govorkov, A.V., Redwing, J. M., Redwing, J.M., Cao, X. A., Cao, X.A., Pearton, S. J., and Pearton, S.J.

Subjects
SCHOTTKY barrier diodes, ELECTRIC current rectifiers, ELECTRIC currents, GALLIUM compounds
Abstract

Planar geometry, lateral Schottky rectifiers were fabricated on high resistivity Al[sub x]Ga[sub 1-x]N (x=0-0.25) epitaxial layers grown on sapphire substrates. The reverse breakdown voltages of unpassivated devices increased with Al composition, varying from 2.3 kV for GaN to 4.3 kV for Al[sub 0.25]Ga[sub 0.75]N. The reverse current-voltage (I-V) characteristics showed classical Shockley-Read-Hall recombination as the dominant mechanism, with I∝V[sup 0.5]. The reverse current density in all diodes was in the range 5-10x10[sup -6] A cm[sup -2] at 2 kV. The use of p[sup +] guard rings was effective in preventing premature edge breakdown and with optimum ring width increased V[sub B] from 2.3 to 3.1 kV in GaN diodes. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Published
2000
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42. Ultrahigh Si[sup +] implant activation efficiency in GaN using a high-temperature rapid thermal process system.

Author

Cao, X. A., Abernathy, C. R., Singh, R. K., Pearton, S. J., Fu, M., Sarvepalli, V., Sekhar, J. A., Zolper, J. C., Rieger, D. J., Han, J., Drummond, T. J., Shul, R. J., and Wilson, R. G.

Subjects
*RAPID thermal processing, *SILICON, *GALLIUM nitride
Abstract

Si[sup +] implant activation efficiencies above 90%, even at doses of 5×10[sup 15] cm[sup -2], have been achieved in GaN by rapid thermal processing at 1400–1500 °C for 10 s. The annealing system utilizes molybdenum intermetallic heating elements capable of operation up to 1900 °C, producing high heating and cooling rates (up to 100 °C s[sup -1]). Unencapsulated GaN shows severe surface pitting at 1300 °C and complete loss of the film by evaporation at 1400 °C. Dissociation of nitrogen from the surface is found to occur with an approximate activation energy of 3.8 eV for GaN (compared to 4.4 eV for AlN and 3.4 eV for InN). Encapsulation with either rf magnetron reactively sputtered or metal organic molecular beam epitaxy-grown AlN thin films provides protection against GaN surface degradation up to 1400 °C, where peak electron concentrations of ∼5×10[sup 20] cm[sup -3] can be achieved in Si-implanted GaN. Secondary ion mass spectrometry profiling showed little measurable redistribution of Si, suggesting D[sub Si]≤10[sup -13] cm[sup 2] s[sup -1] at 1400 °C. The implant activation efficiency decreases at higher temperatures, which may result from Si[sub Ga] to Si[sub N] site switching and resultant self-compensation. © 1998 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Published
1998
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43. Thermal stability of W and WSi[sub x] contacts on p-GaN.

Author

Cao, X. A., Pearton, S. J., Ren, F., and Lothian, J. R.

Subjects
*THERMAL properties, *TEMPERATURE, *ELECTROCHEMICAL metallizing, *THERMIONIC emission
Abstract

The annealing temperature (400–1100 °C) and measurement temperature (25–300 °C) dependencies of current–voltage characteristics of W and WSi[sub 0.45] contacts on p-GaN have been compared to the more common Ni/Au metallization. At 25 °C, slightly rectifying characteristics were obtained for all three types of contact, but at 300 °C specific contact resistances in the 10[sup -2] Ω cm[sup 2] range were obtained for WSi[sub 0.45] and Ni/Au. This is due to an increase in Mg acceptor ionization efficiency (from 10% at 25 °C to 57% at 300 °C) and more efficient thermionic hole emission across the metal-GaN interface. Both WSi[sub 0.45] and W contacts retained featureless surface morphology for annealing at >900 °C, whereas Ni/Au showed substantial islanding at ≤700 °C. © 1998 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Published
1998
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