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3. Light-induced instability of an InGaZnO thin film transistor with and without SiOx passivation layer formed by plasma-enhanced-chemical-vapor-deposition

12. Nonvolatile Si∕SiO2∕SiN∕SiO2∕Si type polycrystalline silicon thin-film-transistor memory with nanowire channels for improvement of erasing characteristics

14. Light-induced instability of an InGaZnO thin film transistor with and without SiOx passivation layer formed by plasma-enhanced-chemical-vapor-deposition.

15. Nonvolatile Si/SiO2/SiN/SiO2/Si type polycrystalline silicon thin-film-transistor memory with nanowire channels for improvement of erasing characteristics.