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In this letter, we report an approach to quantitative study of the relationship between the oxide charge trapping over the drain extension due to electrical stress and the off-state drain leakage current. It is found that positive charge trapping over the drain extension leads to a significant increase in the off-state drain current if the edge direct tunneling (EDT) is dominant in the drain current but in contrast, it leads to a reduction in the drain current if the band-to-band tunneling in the Si surface is dominant. A quantitative relationship between the charge trapping and the off-state drain leakage current in the EDT regime is established. From the measurement of the off-state current in the EDT regime, the charge trapping can be determined by using the approach developed in this study. [ABSTRACT FROM AUTHOR]

Examines the growth of polycrystalline silicon-boron (Si-B) layer on recrystallized amorphous silicon. Presence of SiB[sub 6] in Si-B layer; Mobility of the B atoms in Si-B layer during thermal annealing; Reduction of B diffusivity by SiB[sub 6].

Demonstrates the room temperature deposition of thin silicon dioxide film by reactive laser ablation from a c-silicon target in a cw low pressure oxygen radio frequency magnetron plasma. Significance on the reactivity of an oxygen gas; Description on the radio frequency hollow oval magnetron system; Demonstration of water free film deposition.