37 results on '"Collazo, Ramón"'
Search Results
2. High conductivity in Ge-doped AlN achieved by a non-equilibrium process
3. High conductivity and low activation energy in p-type AlGaN
4. Effects of temperature and oxygen partial pressure on electrical conductivity of Fe-doped β-Ga2O3 single crystals
5. Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates
6. Schottky contacts to N-polar GaN with SiN interlayer for elevated temperature operation
7. Doping and compensation in heavily Mg doped Al-rich AlGaN films
8. The role of Ga supersaturation on facet formation in the epitaxial lateral overgrowth of GaN
9. Temperature dependence of electronic bands in Al/GaN by utilization of invariant deep defect transition energies
10. Effects of temperature and oxygen partial pressure on electrical conductivity of Fe-doped β-Ga2O3 single crystals.
11. Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates.
12. On the characteristics of N-polar GaN Schottky barrier contacts with LPCVD SiN interlayers
13. High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN
14. Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping
15. Complexes and compensation in degenerately donor doped GaN
16. Observation of carrier concentration dependent spintronic terahertz emission from n-GaN/NiFe heterostructures
17. Impact of impurity-based phonon resonant scattering on thermal conductivity of single crystalline GaN
18. The nature of the DX state in Ge-doped AlGaN
19. Shallow Si donor in ion-implanted homoepitaxial AlN
20. Pinning of energy transitions of defects, complexes, and surface states in AlGaN alloys
21. Quasi-phase-matched second harmonic generation of UV light using AlN waveguides
22. On compensation in Si-doped AlN
23. Quasi-phase-matched second harmonic generation of UV light using AlN waveguides.
24. Strain dependence on polarization properties of AlGaN and AlGaN-based ultraviolet lasers grown on AlN substrates
25. High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates
26. Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN
27. The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN
28. Sapphire decomposition and inversion domains in N-polar aluminum nitride
29. Ge doped GaN with controllable high carrier concentration for plasmonic applications
30. Vacancy compensation and related donor-acceptor pair recombination in bulk AlN
31. Refractive index of III-metal-polar and N-polar AlGaN waveguides grown by metal organic chemical vapor deposition
32. Polarity control and growth of lateral polarity structures in AlN
33. Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures
34. On the origin of the 265 nm absorption band in AlN bulk crystals
35. On the strain in n-type GaN
36. Strain in Si doped GaN and the Fermi level effect
37. Strain in Si doped GaN and the Fermi level effect.
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.