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Your search keyword '"Cui L"' showing total 10 results
Start Over Author "Cui L" Journal applied physics letters
10 results on '"Cui L"'

1. In situ observation of structure and electrical property changes of a Ga-doped ZnO/graphene flexible transparent electrode during deformation

Author

Zhang, L. Q., primary, Gao, Z. F., additional, Tu, Z. Q., additional, Liu, C., additional, Qi, Y., additional, Yang, F., additional, Yang, W., additional, Jiang, D. Q., additional, Guo, Y. P., additional, Ye, Z. Z., additional, Lu, J. G., additional, Hou, X. Y., additional, Li, Y. F., additional, and Cui, L. S., additional

Published
2014
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10. Zero-field spin splitting in In[sub 0.52]Al[sub 0.48]As/In[sub x]Ga[sub 1-x]As metamorphic high-electron-mobility-transistor structures on GaAs substrates using Shubnikov–de Haas measurements.

Author

Cui, L. J., Zeng, Y. P., Wang, B. Q., Zhu, Z. P., Lin, L. Y., Jiang, C. P., Guo, S. L., and Chu, J. H.

Subjects
*MODULATION-doped field-effect transistors, *GALLIUM arsenide
Abstract

Shubnikov–de Haas measurements were carried out for In[sub 0.52]Al[sub 0.48]As/In[sub x]Ga[sub 1-x]As metamorphic high-electron-mobility-transistor structures grown on GaAs substrates with different indium contents and/or different Si δ-doping concentrations. Zero-field (B→0) spin splitting was found in samples with stronger conduction band bending in the InGaAs well. It was shown that the dominant spin splitting mechanism is attributed to the contribution by the Rashba term. We found that zero-field spin splitting not only occurs in the ground electron subband, but also in the first excited electron subband for a sample with Si δ-doping concentration of 6×10[sup 12] cm[sup -2]. We propose that this In[sub 0.52]Al[sub 0.48]As/In[sub x]Ga[sub 1-x]As metamorphic high-electron-mobility-transistor structure grown on GaAs may be a promising candidate spin-polarized field-effect transistors. © 2002 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Published
2002
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