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The microstructural evolution of InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor phase epitaxy was studied as a function of the growth temperature of the GaN quantum barriers (QBs). We observed the formation of basal stacking faults (BSFs) in GaN QBs grown at low temperature. The presence of BSFs terminated by stacking mismatch boundaries (SMBs) leads to the opening of the structure at the surface into a V-shaped trench loop. This trench may form above an SMB, thereby terminating the BSF, or above a junction between the SMB and a subsequent BSF. Fewer BSFs and thus fewer trench defects were observed in GaN QBs grown at temperatures higher than 830 °C. Further increase in the growth temperature of the GaN QBs led to the suppression of the threading dislocation opening into V-pits.

We report on a green light-emitting device, in which the light of an efficient blue 1 mm2 GaInN/GaN light-emitting diode (LED) is converted into green light by an optically pumped GaInN/GaN multiple quantum well structure. This solution reached an efficacy of 127 lm/W, i.e., higher than that of state-of-the-art 1 mm2 GaInN/GaN LEDs emitting directly at the target wavelength, at 350 mA current and 535 nm peak wavelength. Optically pumped converters overcome the design limitations of typical multiple quantum well LEDs, where carrier transport issues limit the maximum number of functioning wells and might help to solve the problem of the green gap.