1. Modeling and de-embedding the interferometric scanning microwave microscopy by means of dopant profile calibration
- Author
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Jean-Michel Hartmann, Nicolas Chevalier, Didier Theron, Romolo Marcelli, L. Michalas, C. Brillard, Fei Wang, Istituto per la Microelettronica e Microsistemi [Roma] (IMM), National Research Council of Italy | Consiglio Nazionale delle Ricerche (CNR), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Nano and Microsystems - IEMN (NAM6 - IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
- Subjects
Materials science ,Physics and Astronomy (miscellaneous) ,Dopant ,business.industry ,Antenna aperture ,Radius ,[SPI.MAT]Engineering Sciences [physics]/Materials ,Interferometry ,Optics ,Amplitude ,Microscopy ,Calibration ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,business ,[SPI.SIGNAL]Engineering Sciences [physics]/Signal and Image processing ,Microwave - Abstract
International audience; This paper presents the full modeling and a methodology for de-embedding the interferometric scanning microwave microscopy measurements by means of dopant profile calibration. A Si calibration sample with different boron-doping level areas is used to that end. The analysis of the experimentally obtained S11 amplitudes based on the proposed model confirms the validity of the methodology. As a specific finding, changes in the tip radius between new and used tips have been clearly identified, leading to values for the effective tip radius in the range of 45 nm to 85 nm, respectively. Experimental results are also discussed in terms of the effective area concept, taking into consideration details related to the nature of tip-to-sample interaction.The authors wish to acknowledge the support from EC by means of “Marie Curie” fellowship in the framework of PEOPLE-2012-ITN project: Microwave Nanotechnology for Semiconductor and Life Science—NANOMICROWAVE, under GA: 317116, as well as the Region Nord-Pas-de-Calais for supporting this work under the project CPER CIA research and the National Research Agency (ANR) under the program Equipex (EXCELSIOR project).
- Published
- 2015