7 results on '"Endo, Katsuyoshi"'
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2. Comparison of thermal oxidation and plasma oxidation of 4H-SiC (0001) for surface flattening
3. Erratum: “Atomic-scale planarization of 4H-SiC (0001) by combination of thermal oxidation and abrasive polishing” [Appl. Phys. Lett. 103, 111603 (2013)]
4. Atomic-scale planarization of 4H-SiC (0001) by combination of thermal oxidation and abrasive polishing
5. Atomic-scale analysis of hydrogen-terminated Si(110) surfaces after wet cleaning
6. Atomically resolved scanning tunneling microscopy of hydrogen-terminated Si(001) surfaces after HF cleaning
7. Atomic structures of hydrogen-terminated Si(001) surfaces after wet cleaning by scanning tunneling microscopy
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