18 results on '"Fang, Z-Q."'
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2. Traps in AlGaN∕GaN∕SiC heterostructures studied by deep level transient spectroscopy
3. Plasma-etching-enhanced deep centers in n-GaN grown by metalorganic chemical-vapor deposition
4. Characterization of near-surface traps in semiconductors: GaN
5. Metastability of defects in p-GaAs grown from a Ga-rich melt
6. Deep centers in a free-standing GaN layer
7. Evolution of deep centers in GaN grown by hydride vapor phase epitaxy
8. On the main irradiation-induced defect in GaN
9. Deep centers in n-GaN grown by reactive molecular beam epitaxy
10. Electron-irradiation-induced deep level in n-type GaN
11. Effect of multistep wafer-annealing on main traps in Czochralski-grown semi-insulating GaAs
12. Thermally stimulated current trap in GaN
13. Electrical field enhanced thermal quenching of a prominent thermally stimulated current peak in semi‐insulating GaAs
14. Prominent thermally stimulated current trap in low‐temperature‐grown molecular beam epitaxial GaAs
15. Photoquenching of hopping conduction in low‐temperature‐grown molecular‐beam‐epitaxial GaAs
16. Traps in semi‐insulating InP studied by thermally stimulated current spectroscopy
17. Infrared quenching and thermal recovery of thermally stimulated current spectra in GaAs
18. Nonalloyed ohmic contacts on low‐temperature molecular beam epitaxial GaAs: Influence of deep donor band
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