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The titanium-doped Ge2Sb2Te5 films were deposited on Si(100) substrates by comagnetron sputtering method. The titanium concentrations in those films were determined by x-ray photoelectron spectroscopy. The influence of Ti doping upon phase change characteristics of the samples has been investigated by x-ray diffraction and a temperature-regulable UVISEL™ typed spectroscopic ellipsometry. With the augmentation of Ti doping concentration, the crystalline temperatures of the films went up while annealing, and the face-centered-cubic phase of them had high thermal stability because of the bond making between Ti and Te elements partly. [ABSTRACT FROM AUTHOR]

Tetragonal L10 FePt films are deposited on the pyramid-type Si substrates fabricated by chemical etching process from (100) Si wafers. The films are composed of different easy-axis orientation FePt grains, most of which with the easy axis along substrate normal, the others with the easy axis tilted from the normal direction. When the magnetic field is applied along the perpendicular direction, the easy-axis tilted grains reverse first, and then the magnetization reversal of the whole film is promoted. Small coercivity, suitable α, and high squareness are obtained. And the coercivity increases when the applied field is tilted from the normal direction. [ABSTRACT FROM AUTHOR]

The nonlinear optical properties of C[SUB60][NH[SUB2]- (CH[SUB2])[SUB3] -Si(OC[SUB2]H[SUB5])[SUB3]][SUB3] sol and gel were investigated by femtosecond optical Kerr gate technique at 820 nm. The nonresonant third-order optical susceptibilities were measured to be 1.4×10[SUP-13] and 1.6×10[SUP-13] esu for the C[SUB60][NH[SUB2]- (CH[SUB2])[SUB3]- Si(OC[SUB2]H[SUB5])[SUB3] sol and gel, respectively, which are two orders larger than that of C[SUB60] molecule. [ABSTRACT FROM AUTHOR]