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The drift in channel current of SiO2/InP metal-insulator-semiconductor field-effect transistors has been calculated using a model in which electrons thermionically tunnel to a conducting layer of In2O3 within the native oxide at the interface. Calculations based on this model using reasonable values for the interface parameters are in good agreement with experimental data. The model differs from previous drift models in that trapping occurs between bulklike materials and not through discrete trap levels and is based on physical evidence for the structure of the SiO2/InP interface. [ABSTRACT FROM AUTHOR]

We model the subpicosecond evolution of a nonthermal electron distribution injected into a GaAs/AlGaAs quantum well using an ensemble Monte Carlo simulation which includes electron-electron scattering. The calculated results are in good agreement with the experimental time dependence of the carrier distribution function from recent bleaching experiments with carrier-carrier scattering the dominant mechanism contributing to band filling. [ABSTRACT FROM AUTHOR]

We have used the modal expansion of the wave function in the discontinuity region based on the superposition principle together with a mode-matching technique to investigate the transmission characteristics of semiconductor quantum wire structures with discontinuities. Our calculations compare quite well with published results for the theoretical transmission coefficient and experimental conductance of a T-stub and split-gate geometry, respectively. We apply this technique to analyze the effect of right-angle bends in narrow quantum wires which show strong resonant behavior due to the presence of discontinuities in this geometry. [ABSTRACT FROM AUTHOR]

InP/SiO[sub 2] interfaces have been studied by high resolution electron microscopy in cross section, by ellipsometry, and by x-ray photoelectron spectroscopy. The roughness of the interface is shown to vary from 10 to 100 A peak to peak depending on the InP surface treatment prior to SiO[sub 2] deposition, and some evidence is found for a small amount of native oxide and P segregation at the interface. Thermal oxide grown on InP at 350 &dec;C is shown to consist of two separate layers, an inner one of 30-70 Å thickness and probably composition InPO[sub 4], and an outer one of 60-Å thickness and probably composition In[sub 2]O[sub 3]. [ABSTRACT FROM AUTHOR]