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There are natural limits to the spatial resolution and the deposited energy densities that can be achieved in femtosecond laser dielectric modification. These arise because of the threshold-like nature of nonlinear absorption. We use two-pulse experiments to show that both limits can be exceeded by taking advantage of absorption seeded by free electrons or self-trapped excitons, depending on the pulse separation. [ABSTRACT FROM AUTHOR]

Carrier kinetics in the density range of N = 1017 - 1020 cm-3 is investigated inside the bulk of crystalline silicon. Most conventional experimental techniques used to study carrier mobility are indirect and lack sensitivity because of charging effects and recombination on the surface. An all optical technique is used to overcome these obstacles. By focusing 1.3-µm femtosecond laser pulses in the volume, we inject an initial free-carrier population by two-photon absorption. Then, we use pump-and-probe infrared microscopy as a tool to obtain simultaneous measurements of the carrier diffusion and recombination dynamics in a microscale region deep inside the material. The rate equation model is used to simulate our experimental results. We report a constant ambipolar diffusion coefficient Da of 2:5 cm² s-1 and an effective carrier lifetime τeff of 2:5 ns at room temperature. A discussion on our findings at these high-injection levels is presented. [ABSTRACT FROM AUTHOR]

Two-photon ionization by focused femtosecond laser pulses initiates the development of micrometer-scale plasmas in the bulk of silicon. Using pump-and-probe transmission microscopy with infrared light, we investigate the space-time characteristics of these plasmas for laser intensities up to 101 2W/cm2 . The measurements reveal a self-limitation of the excitation at a maximum free-carrier density of ffi1019cm~3, which is more than one order of magnitude below the threshold for permanent modification. The plasmas remain unchanged in the --100 ps timescale revealing slow carrier kinetics. The results underline the limits in local control of silicon dielectric permittivity, which are inherent to the use of single near-infrared ultrashort Gaussian pulses. [ABSTRACT FROM AUTHOR]