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Your search keyword '"Hu, Zhongqiang"' showing total 13 results
Start Over Author "Hu, Zhongqiang" Journal applied physics letters
13 results on '"Hu, Zhongqiang"'

4. Voltage control of perpendicular magnetic anisotropy in (Co/Pt)3/Pb(Zn1/3Nb2/3)O3-PbTiO3 multiferroic heterostructures at room temperature.

Author

Peng, Bin, Feng, Mengmeng, Zhang, Yijun, Zhou, Ziyao, Hu, Zhongqiang, and Liu, Ming

Subjects
VOLTAGE control, PERPENDICULAR magnetic anisotropy, HETEROSTRUCTURES, FERROMAGNETIC materials, FERROELECTRIC materials, MAGNETIC coupling
Abstract

Voltage control of perpendicular magnetic anisotropy (PMA) in ferromagnetic/ferroelectric multiferroic heterostructures is a promising method to enable high density and low power perpendicular magnetic information storage. In this study, we successfully achieved large voltage tuning of PMA at room temperature in (Co/Pt)3/Pb(Zn1/3Nb2/3)O3-PbTiO3 (PZN-PT) multiferroic heterostructures. Voltage tuning of magnetic anisotropy and the magnetoelectric coupling effect has been qualitatively studied by ferromagnetic resonance, and the multiferroic heterostructure could be reversibly flipped between two distinct PMA states under zero or high electric fields. During the linear piezo-strain response of PZN-PT, the multiferroic heterostructures exhibit small magnetoelectric coupling and the electric field-induced magnetic anisotropy field was about 295 Oe. During the electric field-induced phase transition of PZN-PT, voltage tuning of PMA enhanced more than two times that of the first linear region and the electric field-induced magnetic anisotropy field increased to 634 Oe. Finally, this magnetoelectric coupling was enhanced to 672 Oe by applying 12 kV/cm, corresponding to a large magnetoelectric coupling coefficient up to 56 Oe·cm/kV. Benefiting from the giant strain response during voltage-induced phase transition in PZN-PT, voltage tuning of PMA in those multiferroic heterostructures is a promising candidate for power-efficient magnetic memories. [ABSTRACT FROM AUTHOR]

Published
2018
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5. Control of magnetic relaxation by electric-field-induced ferroelectric phase transition and inhomogeneous domain switching

Author

Nan, Tianxiang, primary, Emori, Satoru, additional, Peng, Bin, additional, Wang, Xinjun, additional, Hu, Zhongqiang, additional, Xie, Li, additional, Gao, Yuan, additional, Lin, Hwaider, additional, Jiao, Jie, additional, Luo, Haosu, additional, Budil, David, additional, Jones, John G., additional, Howe, Brandon M., additional, Brown, Gail J., additional, Liu, Ming, additional, and Sun, Nian, additional

Published
2016
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13. Enhanced multiferroic properties of the high-valence Pr doped BiFeO3 thin film.

Author

Yu, Benfang, Li, Meiya, Hu, Zhongqiang, Pei, Ling, Guo, Dongyun, Zhao, Xingzhong, and Dong, Shuxiang

Subjects
FERROELECTRIC thin films, PULSED laser deposition, SUBSTRATES (Materials science), X-ray diffraction, PEROVSKITE, HYSTERESIS loop
Abstract

High-valence Pr-doped BiFeO3 (BPF) multiferroic thin film was prepared by pulsed laser deposition on a Pt/TiO2/SiO2/Si substrate. X-ray diffraction analysis indicates that the BPF film is of pure phase with a polycrystalline perovskite structure. The BPF film exhibited enhanced multiferroic properties: (i) a rectangular-shaped electric hysteresis loop with a large Pr of 75 μC/cm2 and a low Ec of 250 kV/cm at Emax ∼620 kV/cm, (ii) a saturated magnetic hysteresis loop with a large Ms of 58 emu/cm3, and (iii) a fatigue-free behavior after being subjected to 1.2×109 switching cycles, which were superior to, in some aspects, those of La- or Nd-doped BiFeO3 films reported before. [ABSTRACT FROM AUTHOR]

Published
2008
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